Novel Cap Annealing Process for SiC Crystal Using ECR-Sputtered Carbon Films and ECR Plasma Ashing

Hirono, Shigeru; Torii, Hironori; Tajima, Tetsuya; Amazawa, Takao; Umemura, Shigeru; Kamata, Toshihide; Hirabayashi, Yasuo

doi:10.4028/www.scientific.net/msf.645-648.725

Cited by 3 publications

(4 citation statements)

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“…Groves are observed only when the Al implantation temperature exceeds 200°C and increase in size for increasing annealing temperature (Hailei et al, 2011, Michaud et al, 2013Spera et al, 2019). In some cases, SIMS analyses reveal possible Al loss through the cap (Hirono et al, 2009;Lazar et al, 2015), but no correlation with surface changes has been demonstrated. The surface roughness after annealing, usually quantified by the root mean square of the deviation of the height profile from the mean height (rms), is strongly related to the used technologies for C-cap fabrication (Tezuka et al, 2012;Ulvac, 2016), the C-cap tolerance to the high temperature treatments (Hirono et al, 2009;Nipoti et al, 2010;Ushio et al, 2011) and the used technology for C-cap removal (Hirono et al, 2009;Ushio et al, 2011), and for this reason it is not possible to identify critical surface features in correlation with ion implantation and annealing conditions.…”

Section: Introductionmentioning

confidence: 99%

“…In some cases, SIMS analyses reveal possible Al loss through the cap (Hirono et al ., 2009; Lazar et al ., 2015), but no correlation with surface changes has been demonstrated. The surface roughness after annealing, usually quantified by the root mean square of the deviation of the height profile from the mean height (rms), is strongly related to the used technologies for C‐cap fabrication (Tezuka et al ., 2012; Ulvac, 2016), the C‐cap tolerance to the high temperature treatments (Hirono et al ., 2009; Nipoti et al ., 2010; Ushio et al ., 2011) and the used technology for C‐cap removal (Hirono et al ., 2009; Ushio et al ., 2011), and for this reason it is not possible to identify critical surface features in correlation with ion implantation and annealing conditions. Indeed, the extrapolation of general conclusions on SiC surface evolution under a C‐cap can be of help in optimising device processing because the creation of different device parts requires different doping species and concentrations, and has different requirements on roughness.…”

Section: Introductionmentioning

confidence: 99%

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4H‐SiC surface morphology after Al ion implantation and annealing with C‐cap

Canino

Fedeli

Albonetti

et al. 2020

Journal of Microscopy

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The root mean square (rms) surface roughness extracted from atomic force microscopy is widely employed to complement the characterisation of ion implantation processes in 4H-SiC. It is known that the protection of a carbon film eliminates or mitigates roughening of the SiC surface during postimplantation annealing. This study, based on a rich original data collection of Al + ion implanted 4H-SiC samples, allows for a quantitative description of the surface morphology as a function of the annealing temperature and time and of the Al implanted concentration. With increasing thermal budget, the evolution from flat, to blurred with ripples, granular, and finally jagged surface, results in a monotonous increase in the root mean square roughness. Additional information is given by the trends of the roughness exponent and of the correlation length, extracted from the height-height correlation function, which account for the surface evolution below 1700°C and for the effect of the Al implanted concentration on the ripple size, respectively. A combination of low roughness parameter and high correlation length identify the transition from ripples to jagged morphology.

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

4H‐SiC surface morphology after Al ion implantation and annealing with C‐cap

Canino

Fedeli

Albonetti

et al. 2020

Journal of Microscopy

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“…We use the ECR plasma system to investigate the mechanisms for the first two effects in order to determine the extent of the damage and the potential for mitigating the damage. ECR systems are often used for deposition [26], etching [27], sputtering [28], and ashing [11]. A capillary-array window was used to separate the plasma radiation from charged-particle bombardment.…”

Section: Introductionmentioning

confidence: 99%

Damage to low-k porous organosilicate glass from vacuum-ultraviolet irradiation

Shohet

Sinha

et al. 2011

SPIE Proceedings

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We investigate the effects of VUV and UV radiation on a number of low-k dielectric films. Two different systems were used to investigate the effects: (1) a synchrotron radiation system as a pure VUV radiation source, and (2) an electron-cyclotron resonance (ECR) plasma system as a plasma source (VUV plus ions). Using the synchrotron-radiation system, we find VUV causes trapped charge accumulation within low-k dielectric films by electron depopulation from the defect states. For organosilicate glass (SiCOH) , the defect states were located 1 eV above the valence band of the dielectric. A model was developed to calculate in-situ charge accumulation. Trapped charges can be depleted with UV-lamp exposure. We examined the use of different energy barriers between layers so that less charge will be accumulated. Using the ECR plasma system, the photon effects can be separated from charged particle effects using a capillary-array window to cover the low-k dielectric films so that only photons from plasma can reach the dielectric. Photon fluence from the plasma can be predicted with a model and measured with a VUV monochromator. Photons from the plasma were shown to be responsible for trapped-charge accumulation within the dielectric, while it was found that ions bombardment results primarily on charge on the surface of the dielectrics.

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“…In this work, we investigate the damage effects of electron cyclotron resonance ͑ECR͒ argon plasma exposure to SiCOH dielectric films. ECR systems can be used for deposition, 11 etching, 12 sputtering, 13 and ashing. 11 A capillary-array window was used to separate the plasma radiation from charged-particle bombardment.…”

Section: Introductionmentioning

confidence: 99%

Plasma damage effects on low-k porous organosilicate glass

He¹,

Antonelli²,

Nishi³

et al. 2010

Journal of Applied Physics

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Damage induced in low-k porous organosilicate glass ͑SiCOH͒ dielectric films by exposure to an electron cyclotron resonance ͑ECR͒ plasma was investigated. The effects of charged-particle bombardment and vacuum ultraviolet radiation were separated. Flux measurements showed that the ECR plasma has a greater photon flux in the vacuum ultraviolet ͑VUV͒ range than in the UV range. Damage was measured by examining the surface potential and capacitance-voltage characteristics after exposure. It was found that during argon ECR plasma processing, 75% of the charge accumulation comes from ions at the surface, while 25% of the charge accumulation occurs from charge trapped within the bulk of the dielectric film. The charge accumulation can be modified by changing the bias voltage of the wafer chuck. UV exposure was shown to repair both sources of damage. Fourier transform infrared ͑FTIR͒ spectroscopy results showed no significant change except for Si-͑CH 3 ͒ x bonds. It was found that both charged-particle bombardment and radiation from the ECR plasma damage these bonds. Ellipsometric measurements showed that both the dielectric thickness and the dielectric constant changed during plasma exposure. In addition, both plasma-induced swelling and UV-exposure shrinking effects were observed. The plasma-induced swelling occurs at the surface of the dielectric without changing the porosity of the dielectric, while UV-induced shrinking changes the porosity significantly.

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Novel Cap Annealing Process for SiC Crystal Using ECR-Sputtered Carbon Films and ECR Plasma Ashing

Cited by 3 publications

References 3 publications

4H‐SiC surface morphology after Al ion implantation and annealing with C‐cap

4H‐SiC surface morphology after Al ion implantation and annealing with C‐cap

Damage to low-k porous organosilicate glass from vacuum-ultraviolet irradiation

Plasma damage effects on low-k porous organosilicate glass

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