2003 Symposium on VLSI Technology. Digest of Technical Papers (IEEE Cat. No.03CH37407)
DOI: 10.1109/vlsit.2003.1221116
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Novel CMP slurries for planarization of multilevel copper interconnect

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“…Researchers in the recent past have studied mixed or modified abrasive particles in order to reduce defects during CMP (9)(10)(11)(12). These studies mostly use abrasives of different inorganic oxides and of different sizes or use micelles etc.…”
Section: Introductionmentioning
confidence: 99%
“…Researchers in the recent past have studied mixed or modified abrasive particles in order to reduce defects during CMP (9)(10)(11)(12). These studies mostly use abrasives of different inorganic oxides and of different sizes or use micelles etc.…”
Section: Introductionmentioning
confidence: 99%