Novel Complete Probabilistic Models of Random Variation in High Frequency Performance of Nanoscale MOSFET

Abstract

The novel probabilistic models of the random variations in nanoscale MOSFET's high frequency performance defined in terms of gate capacitance and transition frequency have been proposed. As the transition frequency variation has also been considered, the proposed models are considered as complete unlike the previous one which take only the gate capacitance variation into account. The proposed models have been found to be both analytic and physical level oriented as they are the precise mathematical expressions in terms of physical parameters. Since the up-to-date model of variation in MOSFET's characteristic induced by physical level fluctuation has been used, part of the proposed models for gate capacitance is more accurate and physical level oriented than its predecessor. The proposed models have been verified based on the 65 nm CMOS technology by using the Monte-Carlo SPICE simulations of benchmark circuits and Kolmogorov-Smirnov tests as highly accurate since they fit the Monte-Carlo-based analysis results with 99% confidence. Hence, these novel models have been found to be versatile for the statistical/variability aware analysis/design of nanoscale MOSFET-based analog/mixed signal circuits and systems.

Comprehensive Analytical Models of Random Variations in Subthreshold MOSFET’s High-Frequency Performances

“…Also, it is noted that Eqs. (13) and (14) have been, respectively, derived by using Eqs. (11) and 12based on the up-to-date analytical model of statistical variation in MOSFET's parameter [20] instead of the traditional one.…”

“…Unfortunately, C g , f T , and f max have not been considered even though they also exist and greatly affect the high-frequency performances of such MOSFET-based circuits/systems. Therefore, analytical models of variations in those major high-frequency characteristics have been performed [13][14][15][16][17]. In [13], an analytical model of variation in f T derived as a function of the variation in C g has been proposed where only strong inversion MOSFET has been focused.…”

“…However, this model is not comprehensive, as none of any related physical levels variable of the MOSFET has been involved. In [14], the models of variations in C g and f T , which are comprehensive as they are in terms of the related MOSFET's physical level variables, have been proposed. Again, only the strong inversion MOSFET has been considered in [14].…”