Novel Design of Vertical Double-Diffused Metal–Oxide–Semiconductor Transistor for High Electrostatic Discharge Robustness

Abstract

We use the point-source method (PSM) to reconstruct a scattered field from its associated far field pattern. The reconstruction scheme is described and numerical results are presented for three-dimensional acoustic and electromagnetic scattering problems. We give new proofs of the algorithms, based on the Green and Stratton-Chu formulae, which are more general than with the former use of the reciprocity relation. This allows us to handle the case of limited aperture data and arbitrary incident fields. Both for 3D acoustics and electromagnetics, numerical reconstructions of the field for different settings and with noisy data are shown. For shape reconstruction in acoustics, we develop an appropriate strategy to identify areas with good reconstruction quality and combine different such regions into one joint function. Then, we show how shapes of unknown sound-soft scatterers are found as level curves of the total reconstructed field.

ESD robustness improvement for integrated DMOS transistors —the different gate‐voltage dependence of It2 between VDMOS and LDMOS transistors

“…This section provides ESD robustness improvement for the VDMOS transistor [14–16]. Figures 2 and 3 show the cross‐sectional structure of VDMOS transistors; Fig.…”