2009 15th IEEE International on-Line Testing Symposium 2009
DOI: 10.1109/iolts.2009.5195991
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Novel DRAM mitigation technique

Abstract: This paper describes a novel patented radiation mitigation technique for DRAM cell memories. Because of their non-symmetrical structure, only one state is sensitive to radiations. This particular property is used to detect and correct upsets. Several fault-tolerant architectures are proposed, which are able to detect and correct all SEU/ MBU in a word, whatever its length. Overhead in term of additional memory cells is lower than other classical mitigation techniques.

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Cited by 3 publications
(3 citation statements)
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“…Unfortunately, this structure requires too many modifications in several components to hinder the quick adoption of PCM. In [3], although triple redundancy technique could cover any number of upset in a given word, it incurs larger overheads in terms of area and power consumption. Differently from the previous approaches, Li et al adopt error correction codes (ECC) to increase the reliability effectively [4][5] [6].…”
Section: Introductionmentioning
confidence: 99%
“…Unfortunately, this structure requires too many modifications in several components to hinder the quick adoption of PCM. In [3], although triple redundancy technique could cover any number of upset in a given word, it incurs larger overheads in terms of area and power consumption. Differently from the previous approaches, Li et al adopt error correction codes (ECC) to increase the reliability effectively [4][5] [6].…”
Section: Introductionmentioning
confidence: 99%
“…But because the density of SRAMs is lower than DRAMs, fewer cells will be upset per unit strike. Figure 2.7 displays the "insensitive state" of a DRAM cell [51] (i.e. the state of the storage capacitor which cannot be modified by radiation).…”
Section: Memory Systemsmentioning
confidence: 99%
“…Because only one state of a DRAM cell is sensitive to radiations (unidirectional errors) the authors in [51] propose a new mitigation technique used for detecting errors. The idea is based on finding the insensitive state of a DRAM cell and then storing the opposite value (which corresponds to the charged state) as the reference value in a cell.…”
Section: Self-healing Memory Systems Through Error Detection and Corr...mentioning
confidence: 99%