Novel Electroforming‐Free Nanoscaffold Memristor with Very High Uniformity, Tunability, and Density

Lee, Shinbuhm; Sangle, Abhijeet; Lu, Ping; Chen, Aiping; Zhang, Wenrui; Lee, Jae Sung; Wang, Haiyan; Jia, Q. X.; MacManus‐Driscoll, Judith L.

doi:10.1002/adma.201401917

Cited by 80 publications

(106 citation statements)

References 29 publications

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“…46,51,52 The central image in Figure 3 shows the resistance change in SDC-SrTiO 3 VAN films when an external voltage is applied. When a positive voltage is applied to the as-grown sample, the device resistance changes from low to high values.…”

Section: A Resistive Switching Phenomenamentioning

confidence: 99%

“…Very recently, as shown in Figure 1(d), new and novel device architectures, vertically aligned nanostructured (VAN) films, [43][44][45][46][47][48][49][50][51][52][53] were developed to overcome several issues in conventional ionic devices as mentioned above. Basically, the development of ionic devices by using VAN films started from a similar motivation of laterally aligned heteroepitaxy films.…”

Section: New Device Architectures For Ionic Devicesmentioning

confidence: 99%

“…In this section, we will introduce several interesting examples, such as memories using RS phenomena, 46 oxide fuel cells, 43,[47][48][49][50] and water splitting. 53 Further applications, as yet unexplored, would be entirely possible by tailoring the various properties of VAN films.…”

Section: Emerging Nanoionics In Van Filmsmentioning

confidence: 99%

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Research Update: Fast and tunable nanoionics in vertically aligned nanostructured films

Lee

MacManus‐Driscoll

2017

APL Materials

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This review provides the design principles to develop new nanoionic applications using vertically aligned nanostructured (VAN) thin films, incorporating two phases which self-assemble in one film. Tunable nanoionics has attracted great attention for energy and device applications, such as ion batteries, solid oxide fuel cells, catalysts, memories, and neuromorphic devices. Among many proposed device architectures, VAN films have strong potential for nanoionic applications since they show enhanced ionic conductivity and tunability. Here, we will review the recent progress on state-of-the-art nanoionic applications, which have been realized by using VAN films. In many VAN systems made by the inclusion of an oxygen ionic insulator, it is found that ions flow through the vertical heterointerfaces. The observation is consistent with structural incompatibility at the vertical heteroepitaxial interfaces resulting in oxygen deficiency in one of the phases and hence to oxygen ion conducting pathways. In other VAN systems where one of the phases is an ionic conductor, ions flow much faster within the ionic conducting phase than within the corresponding plain film. The improved ionic conduction coincides with much improved crystallinity in the ionically conducting nanocolumnar phase, induced by use of the VAN structure. Furthermore, for both cases Joule heating effects induced by localized ionic current flow also play a role for enhanced ionic conductivity. Nanocolumn stoichiometry and strain are other important parameters for tuning ionic conductivity in VAN films. Finally, double-layered VAN film architectures are discussed from the perspective of stabilizing VAN structures which would be less stable and hence less perfect when grown on standard substrates.

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Section: A Resistive Switching Phenomenamentioning

confidence: 99%

Section: New Device Architectures For Ionic Devicesmentioning

confidence: 99%

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Research Update: Fast and tunable nanoionics in vertically aligned nanostructured films

Lee

MacManus‐Driscoll

2017

APL Materials

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“…1 In these composites, new phenomena also occur giving a very powerful way to tune device functionality. Very high ferroelectric Curie temperatures, 2 strongly improved dielectric tunability, 3 reducing dielectric loss, 4 enhanced multiferroic coupling, 5 photostriction-magnetic coupling, 6 strongly enhanced current densities in superconductors, 7 new kinds of memristor devices, 8 and strongly enhanced ionic conduction at lower temperatures have all been reported. 9,10 However, the understanding and origin of unusual strain states in nanocomposite films have not been explored to date.…”

mentioning

confidence: 99%

“…The system is ideal from the chemical point of view because there is minimal intermixing between the two component phases. 8 A simple model which incorporates thermal expansion mismatch and lattice mismatch strain between the phases was used to understand how and why the in-plane and out-of-plane lattice parameters vary with x in the way they do. Finally, the ferroelectric properties of the films were probed and the enhanced properties observed explained in terms of the strain states observed.…”

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confidence: 99%

New strain states and radical property tuning of metal oxides using a nanocomposite thin film approach

et al. 2015

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Strain Tuning and Strong Enhancement of Ionic Conductivity in SrZrO₃–RE₂O₃ (RE = Sm, Eu, Gd, Dy, and Er) Nanocomposite Films

Lee

Zhang

Khatkhatay

et al. 2015

Adv Funct Materials

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wileyonlinelibrary.comThe tensile strain reduces the activation energy for oxygen vacancy migration because the spatial volume of the moving species increases. [ 12 ] In a lateral multilayer system composed of Y-stabilized ZrO 2 (YSZ) and RE 2 O 3 (RE = Y, Lu, and Sc), the ionic conductivity changed systematically depending on the strain state of the YSZ induced by the RE 2 O 3 layers. [ 9,11 ] Interestingly, ionic conductivity in YSZ/Y 2 O 3 multilayers increased by a few orders of magnitude, compared with bulk YSZ fi lm, due to very large tensile strain of 3% in YSZ layer induced by Y 2 O 3 layer.To date few systematic studies have been done to show how ionic conductivity scales with strain. [9][10][11] Owing to limitations on the availability of single crystal substrates and the diffi culty of probing buried planar interfaces, the infl uence of strain alone on the ionic conduction cannot be easily investigated in standard planar structures. Hence, controversy remains over the true origin of the enhanced ionic conduction at interfaces. Further complications in understanding arise because space charge effects and reconstruction (i.e., formation of interface defects such as dislocations and oxygen vacancies), can also contribute to the enhanced ionic conductivity. [ 3,4 ] In vertical nanoscaffold fi lms, the strain is controlled in the out-of-plane direction because vertical heteroepitaxial matching occurs between two epitaxial oxides within the fi lm, instead of between the fi lm and substrate in the standard planar fi lm case. [ 8,[13][14][15][16][17][18][19] Hence, nanoscaffold fi lms offer the following advantages over planar fi lms: a. By choosing the appropriate two phases in a nanoscaffold fi lm, one phase in the fi lm will act as a stiff, strain-controlling phase, while the other phase (which forms the matrix) will be strain-controlled. [ 8,[13][14][15][16][17][18][19] Hence, by using different second phase materials to systematically control the strain, there is the possibility to understand the role of strain independent of the infl uences of charge and surface reconstruction effects. b. Since the lateral dimensions of the two phases in the fi lm are only tens of nm, vertical strains of more than 2% can be induced, independent of fi lm thickness. [ 16,17 ] Also, the vertical strain remains in much thicker fi lms and is independent of the substrate (when the fi lm thickness is larger than a critical fi lm thickness), which is not the case of standard planar fi lms, Fast ion transport channels at interfaces in thin fi lms have attracted great attention due to a range of potential applications for energy materials and devices, for, solid oxide fuel cells, sensors, and memories. Here, it is shown that in vertical nanocomposite heteroepitaxial fi lms of SrZrO 3 -RE 2 O 3 (RE = Sm, Eu, Gd, Dy, and Er) the ionic conductivity of the composite can be tuned and strongly enhanced using embedded, stiff, and vertical nanopillars of RE 2 O 3 . With increasing lattice constant of RE 2 O 3 from Er 2 O 3 to Sm 2 O 3 , i...

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Novel Electroforming‐Free Nanoscaffold Memristor with Very High Uniformity, Tunability, and Density

Cited by 80 publications

References 29 publications

Research Update: Fast and tunable nanoionics in vertically aligned nanostructured films

Research Update: Fast and tunable nanoionics in vertically aligned nanostructured films

New strain states and radical property tuning of metal oxides using a nanocomposite thin film approach

Strain Tuning and Strong Enhancement of Ionic Conductivity in SrZrO₃–RE₂O₃ (RE = Sm, Eu, Gd, Dy, and Er) Nanocomposite Films

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Novel Electroforming‐Free Nanoscaffold Memristor with Very High Uniformity, Tunability, and Density

Cited by 80 publications

References 29 publications

Research Update: Fast and tunable nanoionics in vertically aligned nanostructured films

Research Update: Fast and tunable nanoionics in vertically aligned nanostructured films

New strain states and radical property tuning of metal oxides using a nanocomposite thin film approach

Strain Tuning and Strong Enhancement of Ionic Conductivity in SrZrO3–RE2O3 (RE = Sm, Eu, Gd, Dy, and Er) Nanocomposite Films

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Strain Tuning and Strong Enhancement of Ionic Conductivity in SrZrO₃–RE₂O₃ (RE = Sm, Eu, Gd, Dy, and Er) Nanocomposite Films