Novel Electronic Behavior Driving<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mrow><mml:mi>NdNiO</mml:mi></mml:mrow><mml:mrow><mml:mn>3</mml:mn></mml:mrow></mml:msub></mml:mrow></mml:math>Metal-Insulator Transition

Upton, M. H.; Choi, Y.; Park, Hyowon; Liu, Jian; Meyers, D.; Chakhalian, J.; Middey, S.; Kim, Jong Woo; Ryan, Philip

doi:10.1103/physrevlett.115.036401

Cited by 35 publications

(34 citation statements)

References 28 publications

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“…Phase separation has been recently reported in ultrathin films. [25] Conflicting evidence for the presence of charge ordering [26][27][28][29] and the role of electronic vs. magnetic correlations [28,30] point to the intricate nature of this transition (see for example [31] and references therein).In typical T-driven MIT measurements, the temperature is ramped up from low to high temperatures, driving the system from an insulating to a metallic phase. To observe the memory effect, we perform a series of resistance vs. temperature (R-T) measurements, where we interrupt the usual temperature rise with a reversal of the ramp from heating to cooling at a specific temperature, TH, which lies within the transition region.…”

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Ramp‐Reversal Memory and Phase‐Boundary Scarring in Transition Metal Oxides

et al. 2017

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Transition metal oxides (TMOs) are complex electronic systems which exhibit a multitude of collective phenomena. Two archetypal examples are VO2 and NdNiO3, which undergo a metal-insulator phase-transition (MIT), the origin of which is still under debate. Here we report the discovery of a memory effect in both systems, manifest through an increase of resistance at a specific temperature, which is set by reversing the temperature-ramp from heating to cooling during the MIT. The characteristics of this ramp-reversal memory effect do not coincide with any previously reported history or memory effects in manganites, electronglass or magnetic systems. From a broad range of experimental features, supported by theoretical modelling, we find that the main ingredients for the effect to arise are the spatial Submitted to 22222222224222 phase-separation of metallic and insulating regions during the MIT and the coupling of lattice strain to the local critical temperature of the phase transition. We conclude that the emergent memory effect originates from phase boundaries at the reversal-temperature leaving "scars" in the underlying lattice structure, giving rise to a local increase in the transition temperature.The universality and robustness of the effect shed new light on the MIT in complex oxides.TMOs are a hallmark example of complex electron systems; the competition between charge, spin, strain, lattice, oxidation and other degrees of freedom, having similar energy scales, give rise to numerous collective phenomena [1][2][3] including superconductivity, [4] colossal magnetoresistance [5] and metal-insulator transitions (MIT). [6] In many thin film TMOs which exhibit a temperature (T)-driven phase transition, complexity is manifest through the coexistence of multiple phases where a single phase is expected, [7][8][9][10][11] providing the setting required for emergent phenomena to develop.[1]An intriguing feature found in many of the systems that exhibit the aforementioned phenomena, is the appearance of internal memory, where the system's properties (e.g. resistance or magnetization) depend on the measurement history. Such memory effects appear in various forms and measurement settings, having very different microscopic origins, many of which are still poorly understood. Examples include dynamical memory and slow relaxation in electron-glass systems such as amorphous oxides, [12,13] spatially phase-separated memory in colossal-magnetoresistance manganites, [14] shape-memory in martensitic alloys, [15] and more. [16,17] Here we report the appearance of an unexpected memory effect within the MIT in two prototypical examples of complex TMOs, namely VO2 and NdNiO3 (NNO). The characteristics of the observed effect differ substantially from those of previously reported memory effects, indicating a different microscopic origin.VO2 and NNO both exhibit an MIT, however its features and microscopic origin are quite different. In VO2 the MIT occurs above room temperature, ~340 K, and is accompanied by a structural transition from...

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Ramp‐Reversal Memory and Phase‐Boundary Scarring in Transition Metal Oxides

et al. 2017

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“…This class of materials has received significant attention recently due to the MIT 17 , E -type anti-ferromagnetic transition (AFM) 19 , structural transition 17 , predicted high T c superconductivity 20 , potential for device applications 6,7,21 , and the charge-ordering transition [22][23][24][25][26] . The charge ordering transition, in particular, a) Electronic mail: dmeyers@email.uark.edu has been a source of controversy and still requires further insight [27][28][29][30] . Indeed, devices utilizing less distorted NdNiO 3 (NNO) have already been realized, including electric field control, however the low transition temperature (∼ 150K) limits the practically of such systems 7,18,21 .…”

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“…1(a). In the rare-earth nickelates, the CO transition is invariably present in the bulk, but, as in the manganites, has been shown to be suppressed in hetero-epitaxial ultra-thin film of NNO 24,[29][30][31] . Specifically, it was found that the interface is able to "pin" the symmetry in the non-CO Pbnm state, analogous to the effect of surface strain in La 0.5 Ca 0.5 MnO 3 and Sr 2 RuO 4 12,32 .…”

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Charge order and antiferromagnetism in epitaxial ultrathin films ofEuNiO3

et al. 2015

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“…The microscopic origin of these phenomena is still intensely studied and various models of charge localization are being considered in light of a bond disproportionated insulating state observed in experiments [3][4][5][6][7][8][9][10]. Independently of the exact microscopic picture, it is clear that these materials are characterized by a delicate balance between lattice distortions, covalency, and electronic correlations [11][12][13][14][15].…”

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Light control of the nanoscale phase separation in heteroepitaxial nickelates

Mattoni

Manca

Hadjimichael

et al. 2018

Phys. Rev. Materials

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Strongly correlated materials show unique solid-state phase transitions with rich nanoscale phenomenology that can be controlled by external stimuli. Particularly interesting is the case of light-matter interaction in the proximity of the metal-insulator transition of heteroepitaxial nickelates. In this work, we use near-infrared laser light in the high-intensity excitation regime to manipulate the nanoscale phase separation in NdNiO 3 . By tuning the laser intensity, we can reproducibly set the coverage of insulating nanodomains, which we image by photoemission electron microscopy, thus semipermanently configuring the material state. With the aid of transport measurements and finite element simulations, we identify two different timescales of thermal dynamics in the light-matter interaction: a steady-state and a fast transient local heating. These results open interesting perspectives for locally manipulating and reconfiguring electronic order at the nanoscale by optical means.

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Novel Electronic Behavior DrivingNdNiO3Metal-Insulator Transition

Cited by 35 publications

References 28 publications

Ramp‐Reversal Memory and Phase‐Boundary Scarring in Transition Metal Oxides

Ramp‐Reversal Memory and Phase‐Boundary Scarring in Transition Metal Oxides

Charge order and antiferromagnetism in epitaxial ultrathin films ofEuNiO3

Light control of the nanoscale phase separation in heteroepitaxial nickelates

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