Novel EUV resist materials for 16nm half pitch and EUV resist defects

Self Cite

Extreme ultraviolet (EUV) lithography has emerged as a promising candidate for the manufacturing of semiconductor devices at the sub-14nm half pitch lines and spaces (LS) pattern for 7 nm node and beyond. The success of EUV lithography for the high volume manufacturing of semiconductor devices depends on the availability of suitable resist with high resolution and sensitivity. It is well-known that the key challenge for EUV resist is the simultaneous requirement of ultrahigh resolution (R), low line edge roughness (L) and high sensitivity (S). In this paper, we investigated and developed new chemically amplified resist (CAR) materials to achieve sub-14 nm hp resolution. We found that both resolution and sensitivity were improved simultaneously by controlling acid diffusion length and efficiency of acid generation using novel PAG and sensitizer. EUV lithography evaluation results obtained for new CAR on Micro Exposure Tool (MET) and NXE3300 system are described and the fundamentals are discussed.

Section: Short Acid Diffusion Length Pag Developmentmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Novel EUV Resist Development for Sub-14nm Half Pitch

Kimoto¹,

Naruoka²,

Nakagawa³

et al. 2015

Self Cite

“…Acid diffusion length control is one of the key factor for improving Resolution, LWR and Sensitivity tradeoff of chemically amplified resist. Previously we have reported the EUV resist RLS improvements from acid diffusion length control with resist containing higher Tg resin [7]. In this paper, we have developed new contact hole (CH) and line and space (LS) resist applied new short acid diffusion length PAG and higher Tg resin.…”

Section: Euv Lithographic Evaluationmentioning

confidence: 99%

“…To improve EUV resist lithography performance, many research groups were focused on the development of EUV resist with new and novel materials [3][4][5]. We have developed new materials such as new resist components showing short acid diffusion length, silicon type under layer, and metal type resist [5][6][7]. EUV resist lithography performance requirements should depend on the EUV source power development.…”

Section: Introductionmentioning

confidence: 99%

Novel EUV Photoresist for Sub-7 nm Node

Suzuki¹,

Furukawa²,

Miyata³

et al. 2017

Self Cite

Extreme ultraviolet (EUV) lithography has been recognized as a promising candidate for the manufacturing of semiconductor devices as LS/CH pattern for 7 nm node and beyond. EUV lithography is ready for high volume manufacturing stage. For the high-volume manufacturing of semiconductor devices, significant improvement of sensitivity and line edge roughness (LWR) and Local CD Uniformity (LCDU) is required for EUV resist. It is well-known that the key challenge for EUV resist is the simultaneous requirement of ultrahigh resolution (R), low line edge roughness (L) and faster sensitivity (S). Especially sensitivity and good roughness is important for EUV lithography high volume manufacturing. We are trying to improve sensitivity and LWR/LCDU from many directions. From material side, we found that both sensitivity and LWR/LCDU are simultaneously improved by controlling acid diffusion length and efficiency of acid generation using novel resin and PAG. And optimizing EUV integration is one of the good solution to improve sensitivity and LWR/LCDU. We are challenging to develop new multi-layer materials to improve sensitivity and LWR/LCDU. Our new multi-layer materials are designed for best performance in EUV lithography system. From process side, we found that sensitivity was substantially improved maintaining LWR applying novel type of chemical amplified resist (CAR) and process. EUV lithography evaluation results obtained for new CAR EUV interference lithography. And, metal containing resist is one possibility to break through sensitivity and LWR trade off. In this paper, we will report the recent progress of sensitivity and LWR/LCDU improvement of JSR novel EUV resist and process.

“…Chemical blur produced during PEB is suppressed by decreasing acid diffusion length, but sensitivity is slowed at the same time. To overcome resolution-sensitivity trade-off, increasing acid generation efficiency with suppressing acid diffusion should be needed [7][8][9].…”

Section: Introductionmentioning

confidence: 99%

Challenges to Overcome Trade-off between High Resolution and High Sensitivity in EUV Lithography

Matsuzawa

Fujii

Matsumaru

et al. 2016

EUV lithography is one of the most promising candidate technologies for high volume manufacturing(HVM) of 7nm node beyond. To apply EUV lithography to HVM, high resolution and fast sensitivity with low roughness are required. To improve sensitivity, we developed novel PAG that includes electron withdrawing group (EWG). The PAG showed high acid generation efficiency from our experimental results. Increasing proton source unit in resist matrix also produces high acid generation efficiency. By using the novel PAG and increasing proton source unit ratio in resist matrix, we developed novel resists that produces high resolution patterns with reasonable sensitivity.