Extreme ultraviolet (EUV) lithography has emerged as a promising candidate for the manufacturing of semiconductor devices at the sub-14nm half pitch lines and spaces (LS) pattern for 7 nm node and beyond. The success of EUV lithography for the high volume manufacturing of semiconductor devices depends on the availability of suitable resist with high resolution and sensitivity. It is well-known that the key challenge for EUV resist is the simultaneous requirement of ultrahigh resolution (R), low line edge roughness (L) and high sensitivity (S). In this paper, we investigated and developed new chemically amplified resist (CAR) materials to achieve sub-14 nm hp resolution. We found that both resolution and sensitivity were improved simultaneously by controlling acid diffusion length and efficiency of acid generation using novel PAG and sensitizer. EUV lithography evaluation results obtained for new CAR on Micro Exposure Tool (MET) and NXE3300 system are described and the fundamentals are discussed.

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Extreme ultraviolet (EUV) lithography has been recognized as a promising candidate for the manufacturing of semiconductor devices as LS/CH pattern for 7 nm node and beyond. EUV lithography is ready for high volume manufacturing stage. For the high-volume manufacturing of semiconductor devices, significant improvement of sensitivity and line edge roughness (LWR) and Local CD Uniformity (LCDU) is required for EUV resist. It is well-known that the key challenge for EUV resist is the simultaneous requirement of ultrahigh resolution (R), low line edge roughness (L) and faster sensitivity (S). Especially sensitivity and good roughness is important for EUV lithography high volume manufacturing. We are trying to improve sensitivity and LWR/LCDU from many directions. From material side, we found that both sensitivity and LWR/LCDU are simultaneously improved by controlling acid diffusion length and efficiency of acid generation using novel resin and PAG. And optimizing EUV integration is one of the good solution to improve sensitivity and LWR/LCDU. We are challenging to develop new multi-layer materials to improve sensitivity and LWR/LCDU. Our new multi-layer materials are designed for best performance in EUV lithography system. From process side, we found that sensitivity was substantially improved maintaining LWR applying novel type of chemical amplified resist (CAR) and process. EUV lithography evaluation results obtained for new CAR EUV interference lithography. And, metal containing resist is one possibility to break through sensitivity and LWR trade off. In this paper, we will report the recent progress of sensitivity and LWR/LCDU improvement of JSR novel EUV resist and process.

Strong interest has recently developed among the researchers in the use of metals in extreme ultraviolet (EUV) lithography photoresists [1,2] aiming to simultaneously achieve the resolution, line-width roughness and sensitivity (RLS) requirements for 10nm technology node and below and have the highest productivity with low exposure dose requirements (below 20mJ/cm2). In this paper two different metal containing resists (MCR) are discussed: the first one uses metal oxide nanoparticles (NP) bonded with ligands as an alternative non chemically amplified EUV photoresist; the second one introduces a metal species (the sensitizer) into a conventional chemically amplified EUV photoresist. In both cases, the metal is added to the resist system to increase the absorption of EUV photons as well as increase the generation of secondary electrons, thereby making more effective use of the dose. The initial work is focused on manufacturing compatibility, concerning metal cross-contamination, outgassing and hydrides formation risk. Next, lithographic performance is evaluated with respect to the RLS requirements by patterning on NXE:3300 full field scanner exposure tool, with particular emphasis on the material stability of different formulations.. Finally, imaging results at different processing conditions are also reported and discussed.