Novel FLI/ODBR based LDMOSFET: A 2-D simulation study

Vaid, Rakesh; Hussain, Abid; Trikha, A.; Bhushan, Sakshi; Singh, J. S.; Lai, Roshan; Padha, Naresh

doi:10.1109/iwpsd.2007.4472641

Cited by 2 publications

(1 citation statement)

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“…The floating island (FLI) [8–12] concept was proposed in order to break the silicon limit, and it is relatively easy to realise for SiC by the multiple epitaxial overgrowth process compared with super junction. Besides, the FLI in trench MOSFETs has been discussed with regard to the reduction in peak field of the drift region for silicon in 2011 [13].…”

Section: Introductionmentioning

confidence: 99%

Investigation of SiC trench MOSFET with floating islands

Song

Tang

Zhang

et al. 2016

IET Power Electronics

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The silicon carbide trench metal-oxide-semiconductor field-effect transistors (SiC UMOSFET) with P + floating island (FLI) which shields the gate oxide at the bottom of the gate trench from the high electric field during the blocking state and enhances the breakdown voltage (BV), is presented in this study using two-dimensional simulations. The effects of doping concentration, length and position of FLI on BV, electric field distribution and specific on-resistance (R on,sp) are studied, thereby providing particularly useful guidelines for the design of this new type of device when considering the breakdown of the gate oxide layer. For the suitable device design, the results indicate that BV and Baliga figure of merit are, respectively, increased by 150 and 439% compared with a conventional SiC UMOSFET. At the same time, the SiC FLI UMOSFET has smaller gate-drain capacitance and better switching performance compared with the conventional UMOSFET on the condition of the same drift layer parameters. FLI introduced have almost no influence on the recovery characteristics of body diode.

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Section: Introductionmentioning

confidence: 99%