Novel fully vertical GaN p–n diode on Si substrate grown by metalorganic chemical vapor deposition

Mase, Suguru; Urayama, Yuya; Hamada, Takeaki; Freedsman, Joseph J.; Egawa, Takashi

doi:10.7567/apex.9.111005

Cited by 37 publications

(27 citation statements)

References 23 publications

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“…GaN-on-Si offers a cost-effective alternative for vertical GaN power devices, due to its large-scale availability, low cost, and a mature fabrication technology. Vertical GaN-on-Si P-i-N and Schottky diodes [10][11][12][13][14][15][16][17][18], and more recently, the first vertical transistor have been demonstrated on 6-inch Si substrates [19]. For practical use of the emerging vertical transistors in several topologies of power converters, such as buck/boost converters, voltage-source inverters, and resonant converters, an extra freewheeling diode is required to allow a reverse flow of current during off-state [20][21][22].…”

Section: Introductionmentioning

confidence: 99%

Vertical GaN-on-Si MOSFETs With Monolithically Integrated Freewheeling Schottky Barrier Diodes

Liu

Khadar

Matioli

2018

IEEE Electron Device Lett.

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1 Abstract-We demonstrate for the first time the monolithic integration of vertical GaN MOSFETs with freewheeling Schottky barrier diodes (SBD), based on a 6.7-μm-thick n-p-n heterostructure grown on 6-inch silicon substrates by metal organic chemical vapor deposition. The anode of the SBD is integrated in the source pad of the MOSFET and the cathode is directly connected to the MOSFET drain through the bottom n + -GaN layer, eliminating the need of any metal wire interconnection. This monolithic integration scheme offers reduced footprint, minimized parasitic components and simplified packaging. The integrated MOSFET-SBD showed enhancement-mode operation with a threshold voltage of 3.9 V, an on/off ratio of over 10 8 and a dramatic improvement in reverse conduction, without degradation in on-state performance from the integration of the SBD. The integrated GaN-on-Si vertical SBD exhibited excellent performance, with a specific on-resistance of 1.6 mΩ·cm 2 , a turn-on voltage of 0.76 V, an ideality factor of 1.5, along with a breakdown voltage of 254 V. These results reveal the promising potential of emerging GaN vertical devices for future power converters.

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Section: Introductionmentioning

confidence: 99%

Vertical GaN-on-Si MOSFETs With Monolithically Integrated Freewheeling Schottky Barrier Diodes

Liu

Khadar

Matioli

2018

IEEE Electron Device Lett.

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“…However, the high cost and small available size of bulk GaN substrates limit the wide-spread commercial adoption of vertical power devices on bulk GaN. The GaN-on-Si platform offers a costeffective alternative for vertical GaN power devices, due to its large-scale availability, low cost, and a mature fabrication technology [14][15][16][17][18][19][20].…”

Section: Introductionmentioning

confidence: 99%

645 V quasi-vertical GaN power transistors on silicon substrates

Liu

Khadar

Matioli

2018

2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs (ISPSD)

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In this paper, we present GaN-on-Si vertical transistors consisting of a 6.7 μm thick n-p-n heterostructure grown on 6-inch silicon substrates by MOCVD. The fabricated vertical trench gate MOSFETs exhibited E-mode operation with a threshold voltage of 3.3 V and an on/off ratio of over 10 8. A specific on-resistance of 6.8 mΩ•cm 2 and a high off-state breakdown voltage of 645 V were achieved. These results show the great potential of the GaN-on-Si platform for the next generation of cost-effective power electronics.

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“…Over the past few years, numerous work has been carried out on GaN power devices with lateral structure such as high electron mobility transistor. To further realise higher breakdown voltage, better thermal management and more yield for volume production of GaN power devices, there has been extensive interest in the development of vertical device structure [3][4][5][6][7][8][9]. Until now, dramatic progresses have been demonstrated for fully vertical power devices on bulk n-GaN substrates through homoepitaxial growth [3].…”

mentioning

confidence: 99%

Demonstration of fully vertical GaN‐on‐Si Schottky diode

et al. 2017

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The realisation of a fully vertical gallium nitride (GaN)-on-silicon (Si) Schottky barrier diode (SBD) without using wafer bonding and Si substrate removal process is reported. The SBD presented a turn-on voltage of 0.69 V at 1 A/cm 2 , breakdown voltage of 148 V with a specific on-resistance of 13.9 mΩ cm 2. The ideality factor and Schottky barrier height were 1.35 and 0.71 eV, respectively. An effective critical electric field was estimated to be 1.48 MV/cm. The Baliga's figure of merit for the SBD was calculated to be 1.57 MW/cm 2. These results indicate the great potential of GaNon-Si in achieving cost-effective fully vertical power device.

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Novel fully vertical GaN p–n diode on Si substrate grown by metalorganic chemical vapor deposition

Cited by 37 publications

References 23 publications

Vertical GaN-on-Si MOSFETs With Monolithically Integrated Freewheeling Schottky Barrier Diodes

Vertical GaN-on-Si MOSFETs With Monolithically Integrated Freewheeling Schottky Barrier Diodes

645 V quasi-vertical GaN power transistors on silicon substrates

Demonstration of fully vertical GaN‐on‐Si Schottky diode

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