We report novel GaN fully vertical p–n diode on Si grown by metalorganic chemical vapor deposition. The thick strained layer superlattice is effective in controlling a doping level of 1016 cm−3 in an n−-GaN drift layer. The GaN p–n diode exhibits a differential on-resistance R on of 7.4 mΩ cm2, a turn-on voltage of 3.4 V, and a breakdown voltage V B of 288 V. The corresponding Baliga’s figure of merit (FOM) is 11.2 MW/cm2. A good FOM value for the GaN-on-Si vertical p–n diode is realized for a drift layer thickness of 1.5 µm without using substrate removal technology.

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The realisation of a fully vertical gallium nitride (GaN)-on-silicon (Si) Schottky barrier diode (SBD) without using wafer bonding and Si substrate removal process is reported. The SBD presented a turn-on voltage of 0.69 V at 1 A/cm 2 , breakdown voltage of 148 V with a specific on-resistance of 13.9 mΩ cm 2. The ideality factor and Schottky barrier height were 1.35 and 0.71 eV, respectively. An effective critical electric field was estimated to be 1.48 MV/cm. The Baliga's figure of merit for the SBD was calculated to be 1.57 MW/cm 2. These results indicate the great potential of GaNon-Si in achieving cost-effective fully vertical power device.

The trapping and emission of carriers in the gate-to-drain region of an AlGaN/GaN high-electron-mobility transistor (HEMT) have been investigated using a bias-controllable field plate (CFP). Once an instantaneous positive CFP voltage is applied after bias stress in a transient drain current measurement, carrier trapping occurs, which can subsequently be observed as a drain current discontinuity. Numerical analysis of carrier trapping using the Shockley–Read–Hall process also provides a trapped carrier density of 5.1 × 1012 cm−2 and an energy level of 0.6 eV.