Novel GaAs FET modeling technique for MMICs

Chen, T.-H.; Kumar, M V Chaitanya

doi:10.1109/gaas.1988.11021

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The Small-signal Equivalent Circuit1

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1989

2018

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Cited by 12 publications

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“…Furthermore the frequency iimitations of (1] and [5) have been overcome by a fully analytic solution of the intrinsic Y-parameter equations as in [7] for the circuit of Fig. L First, the external parasitic elements have to be determined by so-called cold modeling at a drain-to-source voltage of 0 V, as described in [! ], [2], and [4]. Then " hot" measured S parameters (Vrls > 0 V) arc de-embedded from the external parasitic elements to obtain the equivalent Y parameters of the intrinsic device.…”

Section: The Small-signal Equivalent Circuitmentioning

confidence: 99%

High-frequency equivalent circuit of GaAs FETs for large-signal applications

Berroth

Bosch

1991

IEEE Trans. Microwave Theory Techn.

185

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-'l'lte.applicallon of GaAs field effect transistors in digital circuits requires a vaild description by an equivalent circuit at all possible .;ate arid dl'ain bias voltages for all frequendes from de up to lbe GHz ra4ge. This paper describes an equivalent circuit which takes into account ihe galt current of positively biased transistors as well as lbe symme~rical natun of lbe devices at low drain voltages. A fast method to determine the elements of tbe equivalent circuit from mea· sured S parameters b presented which delivers for the first time very good agreement for all ope. rating points.

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Section: The Small-signal Equivalent Circuitmentioning

confidence: 99%