Novel high performance SPDT power switches using multi-gate FET's

McGrath, F.; Varmazis, C.; Kermarrec, C.; Pratt, R. G.

doi:10.1109/mwsym.1991.147137

Cited by 29 publications

(5 citation statements)

References 3 publications

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“…Correspondingly, the applied RF voltage is being divided between elementary single-gate devices leading to higher overall switching powers (see, e.g. [9], [10]). III-N RF switches are capable of very high RF switching powers due to high breakdown voltages [14].…”

Section: Multi-gate C 3 Rf Switchesmentioning

confidence: 99%

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Novel RF devices with multiple capacitively-coupled electrodes

Simin

Gaška

Shur

2009

2009 IEEE MTT-S International Microwave Symposium Digest

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We present operation concepts and performance characteristics of novel microwave devices and structures using Oxide-AlGaN/GaN Heterostructures with multiple capacitivelycoupled contacts (C 3 ). The C 3 electrodes do not require annealing and, hence, such devices with tight electrode spacing can be fabricated using a self-aligned process. To illustrate the advantages of C 3 -technology, we demonstrate multi-gate C 3 -RF switches, RF switches with side control electrodes and novel RF-TLM test structures for layer and contact parameter extraction.

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Section: Multi-gate C 3 Rf Switchesmentioning

confidence: 99%

“…As an example, GaAs technology uses multi-gate RF switches to increase the switching powers and the isolation in the OFF-state [9,10]. Due to fully self-aligned technology, C 3 devices are ideally suitable for multi-gate configurations.…”

Section: Introductionmentioning

confidence: 99%

Novel RF devices with multiple capacitively-coupled electrodes

Simin

Gaška

Shur

2009

2009 IEEE MTT-S International Microwave Symposium Digest

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“…GaAs FET based switches can be operated with nearly zero power dissipation, but distortion of the waveform can result at high transmit power due to the limited breakdown voltage of these devices. To achieve high power handling capability, the switches require the use of a multi-gate structure or a series-stacked FETs configuration [1]- [3]. But these suffer from an increased on-state resistance and large device periphery.…”

Section: Introductionmentioning

confidence: 99%

“…But these suffer from an increased on-state resistance and large device periphery. In addition, conventional FET based high power switch design has a disadvantage of requiring negative voltages to control the on and off states [3]- [4].…”

Section: Introductionmentioning

confidence: 99%

High power RF switch MMICs development in GaN-on-Si HFET technology

Yu¹,

Ward²,

Hegazi³

2008

2008 IEEE Radio and Wireless Symposium

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The development of a high power RF SP4T MMIC switch using AlGaN/GaN HFETs on Si substrate is reported for applications up to 2 GHz. The offstate capacitance (Coff) of a single-gate GaN based HFET is 250 fF and the on-state resistance (Ron) is 4.1 at a gate length of 0.7 m and a width of 1 mm. The MMIC SP4T switch with a size of 1.2x1.6 mm 2 is implemented for system applications of three transmit paths and a receiver, of which each was configured with a series-shunt self-biased configuration. The switch has achieved an insertion loss of -0.95 dB with power handling of P(-0.1dB)=45 dBm at 1 GHz at the transmitter paths and an optimized isolation of better than 28 dB at the receiver path of up to 2.5 GHz. In addition, a high voltage switch driver using the GaN power HFET technology was designed with an input control voltage of 0/2.3 V to provide an output voltage of 0/28 V. This development provides a baseline design for our first generation MMIC switches in GaN technology.Index Terms -GaN HFET, MMIC switches, high power switches, SP4T.

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“…With this rapid growth, there has been increasing pressure on the ratio of performance over price for the RF transceiver. Although RF CMOS integrated circuits are receiving much attention due to their potential for low cost and large scale integration, the RF performance achieved hy RF CMOS power devices has been considered inferior compared to GaAs discrete components such as switches , [2] due to the limited break down voltage and operational ' frequency. Switches made in GaAs PHEMT technology are well suited for multiple band switching and routing the RF signal through the transceiver at minimal current consumption.…”

Section: Introductionmentioning

confidence: 99%

Low insertion loss and high linearity PHEMT SPDT and SP3T switch ICs for WLAN 802.11 a/b/g applications

Johnson

Belletete

et al.

2004 IEE Radio Frequency Integrated Circuits (RFIC) Systems. Digest of Papers

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GaAs SPDT and SP3T antenna switch ICs for IEEE SOZ.lla/ldg applications are developed. By using advanced Skyworks PHEMT technologies, it is possible to achieve an insertion Iws as low as 0.55 dB for SPDT switch, 0.5 dB lower than any previously reported DC-6 GHz band switch, and high linearily with 55 dBm input IP3 and a high isolation over 20 dB at 3 V; The SP3T switch also exhibits ercellcnt performance with an inscllion loss of 0.9 dB, input 1P3 of 47 dBm and isolation over 25 dB throughout DC-6 GHz band. The high performance comes from the following technologies: series and shunt topology with dual-gate FETs, AlGaAs/lnCaArlAlGaAs 0.5 um EPI-based process with a fully selective dual recess etch, and the relatively shallow pinch offvoltage o f 4 . 5 V (11.

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Novel high performance SPDT power switches using multi-gate FET's

Cited by 29 publications

References 3 publications

Novel RF devices with multiple capacitively-coupled electrodes

Novel RF devices with multiple capacitively-coupled electrodes

High power RF switch MMICs development in GaN-on-Si HFET technology

Low insertion loss and high linearity PHEMT SPDT and SP3T switch ICs for WLAN 802.11 a/b/g applications

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