Novel InGaP/AlGaAs/InGaAs heterojunction FET for X-Ku band power applications

Okamoto, Yasuhiro; Matsunaga, K.; Kuzuhara, Masaaki; Kanamori, M.

doi:10.1109/mwsym.1997.596540

Cited by 10 publications

(8 citation statements)

References 3 publications

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“…Standard deviation across a 4-in wafer in the pinch-off voltage as low as 22 mV can be achieved by using the highly selective wet etching process. It is much better than that of our AlGaAs gated PHEMTs mV and the AlGaAs gated PHEMTs with a InGaP etching stop layer mV [5]. To probe the thermal stability of the noise performance, the same devices were stressed at 100 C, 150 C, 200 C, and 250 C, all for 12 h, respectively.…”

Section: Resultsmentioning

confidence: 88%

“…However, several disadvantages still exist, for example, in the viewpoint of achieving precise control of gate recess etching and reliability for thermal stress compared to AlGaAs gated PHEMTs. InGaP-related devices with the following advantages, such as higher InGaP energy gap, higher valence-band discontinuity [3], no deep-complex (DX) center [4], excellent etching selectivity between InGaP and GaAs [5], [6], and good thermal stability have recently been developed [6]. Significant efforts have been made in pursuit of the ternary compound In Ga P lattice matched to GaAs in several advanced devices [7], [8].…”

Section: Introductionmentioning

confidence: 99%

“…Significant efforts have been made in pursuit of the ternary compound In Ga P lattice matched to GaAs in several advanced devices [7], [8]. PHEMTs with InGaP as surface layer [5], Schottky layer, etching stop layer [6] with performance have been demonstrated. Hence, the interests in InGaP gated PHEMT on GaAs substrate lay in the past primarily on RF performance improvement and their applications for low noise and power microwave devices [8], [9].…”

Section: Introductionmentioning

confidence: 99%

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Super low noise InGaP gated PHEMT

Huang

Wang

Wu³

et al. 2002

IEEE Electron Device Lett.

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Very high performance InGaP/InGaAs/GaAs PHEMTs will be demonstrated. The fabricated InGaP gated PHEMTs devices with 0.25 160 m 2 and 0.25 300 m 2 of gate dimensions show 304 mA/mm and 330 mA/mm of saturation drain current at GS = 0 V, DS = 2 V, and 320 mS/mm and 302 mS/mm of extrinsic transconductances, respectively. Noise figures for 160 m and 300 m gate-width devices at 12 GHz are measured to be 0.46 dB with a 13 dB associated gain and 0.49 dB with a 12.85 dB associated gain, respectively. With such a high gain and low noise, the drain-to-gate breakdown voltage can be larger than 11 V. Standard deviation in the threshold voltage of 22 mV for 160 m gate-width devices across a 4-in wafer can be achieved using a highly selective wet recess etching process. Good thermal stability of these InGaP gated PHEMTs is also presented.

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Section: Resultsmentioning

confidence: 88%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Super low noise InGaP gated PHEMT

Huang

Wang

Wu³

et al. 2002

IEEE Electron Device Lett.

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“…Temperature effects are not included in the simulation. They can account for more than 10% change in at V [14].…”

Section: B Simulation Of the Output Characteristicsmentioning

confidence: 99%

Development of global calibration for accurate GaAs-PHEMT simulation

Brech

Grave

Selberherr

2000

IEEE Trans. Electron Devices

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Today's GaAs PHEMTs make it possible to cover applications of an extremely wide frequency range, as high as 100 GHz, with a single device type. In this paper, a set of models and calibrations for the predictive device simulation of GaAs PHEMTs is developed. The simulation setup includes a description of the device geometry. In particular, a realistic representation of the region between the ohmic contacts and the channel is included along with the fitting procedure of the simulation parameters and the necessary transport and interface models. In addition, special emphasis has been placed on a simultaneous fitting of currents and capacitances. The resulting setup allows to describe different devices without changing any nontechnology dependent parameters and thus provides a global calibration within a given device family. This capability is demonstrated by comparing the measured and simulated results of five very different devices which cover gate lengths from 120 to 500 nm, transconductances from 400 to 800 mS/mm, and ungated channel lengths from 70 to 600 nm Index Terms-Calibration, GaAs, millimeter wave devices, MODFET, semiconductor heterojunctions, simulation. I. INTRODUCTIONT HE GaAs wafer industry has experienced phenomenal growth over the last few years [1]. Today, MESFETs are the working horse for most large volume applications. As the demands on device performance are increased other transistors like pseudomorphic HEMTs (PHEMTs) and HBTs are becoming very important.PHEMTs on GaAs are able to cover an extremely wide frequency range with very good competitiveness over other technologies. Depending on the application, different requirements arise. The lower important frequency range 0.9/1.9 GHz is used for mobile communication where HEMTs are competing with various other technologies such as LDMOS, Si/Ge-HBTs, III-V-HBTs, and GaAs-MESFETs. Therefore, cheap volume production is one of the most important requirements. These HEMTs will typically have gate lengths between 500 nm and 1 m and breakdown voltages over 10 V. Frequency bands around 40 GHz for base stations lead to a trade off between RF performance and power capability. HEMTs for applications around 77 GHz and 94 GHz are usually optimized in first place with respect to their RF performance. Therefore, they typically exhibit gate lengths below 150 nm and breakdown voltages around 5 V.

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“…2301 excellent etching selectivity between InGuP and GuAs [3,4], good thermal stability have recently been dewlopeJ [4], and higher Schottk Y' b(lrrier height [4). Schottk-y barrier may suffer gate swing voltage, breakdown voltage and gate leakage current, which ma\' limit the device applications.…”

Section: Introductionmentioning

confidence: 99%

InGaP/InGaAs/GaAs metal-oxide-semiconductor pseudomorphic high electron mobility transistor with a liquid phase oxidized InGaP gate

Lee

Lin

Yang

et al.

Proceedings. 7th International Conference on Solid-State and Integrated Circuits Technology, 2004.

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lnGaP/lnGaAs/GaAs metal-oxide-semiconductor pseudomorphic high electron mobility trans" istors (MOS-PI-18Mr,,) are reported. The gate dielectric is fOlmed by oxidizing InGaP material in liquid phase. As compared to its counterpart PHEMTs, the MOS-PHEMTs with a larger gate swing. voltage, a lower gutt: leakage current and a higher breakdown voltage can bt: llbsen·ed. ConsequentiallY, the studied MOS-PHEMT pnn-idcs the promisc for high-power applications.

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Novel InGaP/AlGaAs/InGaAs heterojunction FET for X-Ku band power applications

Cited by 10 publications

References 3 publications

Super low noise InGaP gated PHEMT

Super low noise InGaP gated PHEMT

Development of global calibration for accurate GaAs-PHEMT simulation

InGaP/InGaAs/GaAs metal-oxide-semiconductor pseudomorphic high electron mobility transistor with a liquid phase oxidized InGaP gate

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