Novel integration method for III–V semiconductor devices on silicon platform

Abstract

A novel integration method for III–V semiconductor devices on a Si platform was demonstrated. Thin-film InP was directly bonded on a Si substrate and metal organic vapor phase epitaxy (MOVPE) growth was performed by using an InP/Si template. A void-free 2-in. InP layer bonded on a Si substrate was realized, and a low interfacial resistance and ohmic contact through the bonded interface were observed. After the MOVPE process, the as-grown structure was optically active and we observed photoluminescence (PL) intensity comparable to that from the same structure grown on InP as a reference. Furthermore, almost no lattice strain was observed from the InP layer. Then, the epitaxial growth of a GaInAsP–InP double-hetero (DH) laser diode (LD) was demonstrated on the substrate and we observed lasing emission at RT in a pulse regime. These results are promising for the integration of InP-based devices on a Si platform for optical interconnection.

Characteristics of Multi‐Quantum‐Well Laser Diodes with Surface Electrode Structure Directly Bonded to InP Template on SiO2/Si Substrate

“…Finally, an i-GaInAs layer with a thickness of 200 nm was grown to protect the surface of the InP template. [11][12][13] After thin InP templates were grown, they were used in the fabrication of the InP/Si and InP/SiO 2 /Si substrates. Herein, mainly the fabrication process for LDs on InP/SiO 2 /Si substrates is described.…”

“…Finally, an i‐GaInAs layer with a thickness of 200 nm was grown to protect the surface of the InP template. [ 11-13 ]…”

Development of an Epitaxial Growth Technique Using III-V on a Si Platform for Heterogeneous Integration of Membrane Photonic Devices on Si

“…Consequently, direct bonding of III-V membrane layers on a Si substrate followed by epitaxial regrowth of InP-based material is an effective technique [44][45][46][47][48][49][50][51][52]. This technique overcomes the problems with direct epitaxial growth and bonding techniques.…”

Lasing Characteristics of 1.2 µm GaInAsP LD on InP/Si Substrate

“…Although monolithic integration is the most desirable approach, the presence of antiphase domain (APD) structures and lattice mismatch that lead to threading dislocations make it difficult to obtain long lifetime of the optical light sources. On the other hand, hybrid integration is widely implemented by many researchers; however, we have proposed the monolithic integration of III–V LD epitaxial layers on wafer‐bonded InP/Si substrate via metal organic vapor phase epitaxy (MOVPE) . The uniqueness of this approach is the adhesion of InP thin film and Si substrate before MOVPE growth.…”

“…Moreover, this approach should lead to low cost and high reliability, a reduction in the number of joints and effective optical coupling. We have previously demonstrated successful lasing operation for 1.2 µm GaInAsP broad LDs grown on directly bonded InP/Si substrate . To compare the InP/Si substrate, we have also prepared 1.2 µm GaInAsP broad LDs on InP substrates as a reference.…”