Lasing Characteristics of 1.2 µm GaInAsP LD on InP/Si Substrate

Abstract

Crystal growth on a Si substrate for the fabrication of a 1.2 mm GaInAsP laser diode is demonstrated via metal organic vapor phase epitaxy and lasing operation in the pulse regime at room temperature was successfully achieved. Direct wafer bonding at 400 C for the InP thin film and Si substrate is conducted prior to the growth process is adopted. After the bonding process, epitaxial layers are grown for the monolithic integration of InP optical devices on the wafer-bonded InP/Si substrate. The surface after crystal growth is quite smooth and contains less voids. The photoluminescence (PL) intensity of GaInAsP on the InP/Si substrate is almost equivalent to the PL intensity of InP substrate as a reference. After forming a metallic contact at the n-Si and p-InP sides, the chips are cleaved and the current density-light output (I-L) characteristics are measured. The I-L characteristics show that there is a difference in the threshold current density between the InP/Si substrate and InP substrate. The increase in the threshold current density is dependent on the measurement temperature, and that for the InP/Si substrate was as low as 4 kA cm À2 .

III/V-on-Si MQW lasers by using a novel photonic integration method of regrowth on a bonding template

“…Compared with other integration schemes, the method can be potentially cost-competitive and highly scalable, with a high integration proximity and density. By combining traditional heterogeneous and monolithic photonic integration 11,13 , we can achieve large wafer-scale μm-thick III/V epitaxy and advanced all-in-one photonic integration for a variety of applications.…”

“…It combines the advantages of monolithic growth and wafer bonding approaches, aiming to provide a low-dislocation-density, low-cost wafer-scale integration scheme. A combination of epitaxial growth and wafer bonding has been reported for lateral injection membrane lasers 10–12 and double-heterostructure lasers 13 . However, the former requires a relatively complex and unconventional process to make p- and n-doping regions and to form a lateral p–i–n diode structure through an extra regrowth step.…”

Gain Coefficient Comparison between Silicon and InP Laser Diode Substrate

“…The growth temperature and pressure were 650 °C and 8 kPa (60 Torr). [14] In our previous published paper, [19] growth conditions such as layer thickness of the active layer and cladding layer, as well as doping conditions, were not optimized. Hence, the threshold current density was more than 3 kA cm À2 .…”