Numerical Analysis and Lasing Characteristics of GaInAsP Double-Heterostructure Lasers on InP/Si Substrate

Periyanayagam, Gandhi Kallarasan; Shimomura, Koichiro

doi:10.1007/s11664-022-09737-x

Cited by 1 publication

(1 citation statement)

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“…Using the hydrophilic adhesive model, we obtained the composition of InP thin film and Si substrate evenly bonded and there were no traces of debonding, enabling us to manufacture FP LDs. [17,18] For the fabrication of the LD, we bonded 2 cm * 2 cm InP thin film and 3 cm* 3 cm Si substrate. After the bonding of the InP thin film and Si substrate, the void density and the void area occupancy were observed to be 482 cm À2 and 0.094%, and void height was about 0.5 μm.…”

Section: Methodsmentioning

confidence: 99%

Gain Coefficient Comparison between Silicon and InP Laser Diode Substrate

Periyanayagam,

Shimomura

2024

Physica Status Solidi (a)

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The article presents the study on the comparison of gain coefficient of laser diode on silicon and InP substrate. Fabry–Perot GaInAsP bulk laser diode on InP/Si substrate is successfully obtained to study the optical gain coefficient of laser diode. The influences of temperature, threshold current comparison, and optical gain achievements between bulk InP/Si laser diode substrate and InP laser diode substrate are also analyzed using the same growth structure. A new approach is found by the research group which involves bonding of 1 μm InP semiconductor crystal and a low‐cost silicon crystal prior to epitaxial laser structure growth. With the help of metal–organic vapor‐phase epitaxy technique, GaInAsP double‐heterostructure laser is epitaxially deposited on the well‐bonded InP/Si crystal. Fabry–Perot lasing under pulsed condition is achieved, and the lasing characteristics of InP/Si substrate are compared with that of InP laser device to study the gain coefficient.

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Section: Methodsmentioning

confidence: 99%