Novel interface nitridation process for thin gate oxides

Rahat, Ido; Shappir, J.; Ben-Atar, D.

doi:10.1109/16.239747

Cited by 5 publications

(4 citation statements)

References 27 publications

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“…The body contacts were formed to suppress the parasitic bipolar effect. 16) The width of the N + source region is the same as the body contact spacing. The width of the P + region is constant regardless of the body contact spacing.…”

Section: Device Structure and Fabrication Processmentioning

confidence: 99%

“…In particular, a thinfilm approach has been quite promising because it can not only easily isolate devices from each other but also combine thin-film CMOS/SOI devices without the deep diffusion process usually required for power devices. 3,[15][16][17] The most important concern related to the thin-film SOI power MOSFET (Fig. 1) is how to improve the highfrequency switching performance without degrading reliability.…”

Section: Introductionmentioning

confidence: 99%

“…This has been actively studied by reducing the onresistance and parasitic capacitance. 16,17) The most effective way to do this is to shrink the channel length while keeping the electric field of the drift region. In this case, only the channel length is reduced without changing the drift length.…”

Section: Introductionmentioning

confidence: 99%

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Hot carrier effect of a scaled thin-film silicon-on-insulator power metal oxide semiconductor field-effect transistor under constant drain electric field

Takasugi

Matsumoto

2014

Jpn. J. Appl. Phys.

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Section: Device Structure and Fabrication Processmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Hot carrier effect of a scaled thin-film silicon-on-insulator power metal oxide semiconductor field-effect transistor under constant drain electric field

Takasugi

Matsumoto

2014

Jpn. J. Appl. Phys.

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“…The performance of TFTs had becn found to be dependent upon the quality of the gate dielectric and the polysilicon active layer [l]. It has been shown that the nitrogen pile-up in the interface of SiO2/Si can improve the characteristics metal-oxide-semiconductor (MOS) devices [2]- [3]. However, little work has been done about the nitrogen effects on polysilicon TFT's.…”

Section: Introductionmentioning

confidence: 99%

The characteristics of ammonia-annealed polysilicon thin-film transistors with plasma hydrogenation

Yang

Lei²,

Lee³

International Electron Devices and Materials Symposium

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The NHyannealing and the H2-plasma hydrogenation techniques were jointly used to improve the characteristics of polysilicon thin-film transistors (TFT's). It was found that the TFT's after applying the above treatments achieved better subthreshold swings, threshold ' voltages, field effect mobilities, off currents, and reliability. It is believed that the improvement was due to the gate oxynitride formation and the better H2-plasma response on the TFT with the gate oxgmitride.

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Electron trapping in oxynitride layers in metal-oxide-semiconductor structures

Rahat¹,

Shappir²

1994

Journal of Applied Physics

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Articles you may be interested inEffective lifetime of electrons trapped in the oxide of a metal-oxide-semiconductor structure Appl. Phys. Lett. 75, 522 (1999); 10.1063/1.124435 Depth profile of trapped charges in oxide layer of 6HSiC metal-oxide-semiconductor structures Determination of trapped charge distributions in the dielectric of a metaloxidesemiconductor structure J. Appl. Phys. 57, 5359 (1985); 10.1063/1.334856Capture and release of electrons on Na+related trapping sites in the SiO2 layer of metaloxide semiconductor structures at temperatures between 77 and 296°K This paper discusses electron injected induced trapping-detrapping behavior of nitrided gate insulators and its consistency with the dynamic balance model which characterizes standard silicon dioxide insulators. The experimental results show that the dynamic trapping model is also applicable for the novel nitrided insulators; trapping-detrapping characteristics are field dependent, the magnitude of the trapped negative charge is reduced when the electric field is increased, trappingdetrapping reversibility is evident, steady state trapping level is determined by the insulator field, and the trapping and detrapping transients are dominated by ,the density of the injected electrons. The occupation probability function is determined to be almost identical for both insulator types. The main difference between nitrided insulators and control oxides is lower trapping cross sections for nitrided insulators, and lower concentration of generated traps leading to improved immunity to degradation during charge injection. The novel dielectric layer is of potential use for the fabrication of reliable ultrathin gate oxide films for standard complementary metal-oxide-semiconductor

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Novel interface nitridation process for thin gate oxides

Cited by 5 publications

References 27 publications

Hot carrier effect of a scaled thin-film silicon-on-insulator power metal oxide semiconductor field-effect transistor under constant drain electric field

Hot carrier effect of a scaled thin-film silicon-on-insulator power metal oxide semiconductor field-effect transistor under constant drain electric field

The characteristics of ammonia-annealed polysilicon thin-film transistors with plasma hydrogenation

Electron trapping in oxynitride layers in metal-oxide-semiconductor structures

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