Novel library of logic gates with ambipolar CNTFETs: Opportunities for multi-level logic synthesis

Abstract

This paper exploits the unique in-field controllability of the device polarity of ambipolar carbon nanotube field effect transistors (CNTFETs) to design a technology library with higher expressive power than conventional CMOS libraries. Based on generalized NOR-NAND-AOI-OAI primitives, the proposed library of static ambipolar CNTFET gates efficiently implements XOR functions, provides full-swing outputs, and is extensible to alternate forms with areaperformance tradeoffs. Since the design of the gates can be regularized, the ability to functionalize them in-field opens opportunities for novel regular fabrics based on ambipolar CNTFETs. Technology mapping of several multi-level logic benchmarks -including multipliers, adders, and linear circuits -indicates that on average, it is possible to reduce both the number of gates and area by ∼ 38% while also improving performance by 6.9×.

Advanced system on a chip design based on controllable-polarity FETs

“…Exclusive-OR (XOR) and MAJority (MAJ) logic functions are extensively used in arithmetic circuits; consequently their physical realization is of paramount importance. In this context, MIG transistors open up new opportunities to implement XOR-and MAJ-based logic gates with few resources [6,10,15]. Based on transmission-gates, the implementation of 3-input XOR and 3-input MAJ gates, depicted in Fig.…”

“…Devices with a dynamic configuration property enable a technological uniformity and allow the fabrication processes to be simplified. Recent works [6,7,8] introduced Double-Independent-Gate (DIG) [7] and Three-Independent-Gate (TIG) [8] SiNWFETs to design compact combinational circuits, thanks to the higher device expressiveness. Different techniques have also been proposed for these emerging devices, addressing dedicated logic synthesis tools [9,10], low-power techniques [8,11] and memories [12].…”

Ambipolar Gate-Controllable SiNW FETs for Configurable Logic Circuits With Improved Expressive Capability

“…Regarding the different solutions, the ambipolar-controlled logic gates are among the most promising ones, owing to the higher expressive logic power due to the polarity control as state variable [6]. The polarity control can be achieved in ambipolar devices by using a double-independent-gate (DIG) structure.…”

Design and modeling of nonvolatile memories by resistive switching elements

“…The second gate (referred to as the Polarity Gate, PG) controls its polarity, i.e. when PG is set to logic '0', the ambipolar transistor behaves like a NMOS; when PG is set to logic '1', it behaves like a PMOS [31]. The symbol and the modes of operation of the ambipolar transistor that used in this book are shown in Figure 10.…”

“…The largest and least voltage differences across the PMC are given in (31) and (32) respectively and t p and t n are equal to tstart.…”