Novel Material Development for EUV Resist towards sub-20nm half pitch

Shioya, Takeo; Maruyama, Ken; Kimura, Toru

doi:10.2494/photopolymer.24.199

Cited by 12 publications

(8 citation statements)

References 6 publications

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“…During the past many years, several derivatives of noria (water wheel type molecule) have been explored to be used as molecular resists, − and to our knowledge, the best resolution achieved so far was 20 nm L/S features. − Noria derivates have been used in combination with photoacid generators as small-molecule chemically amplified resists; , however, pristine noria has not been reported for lithography applications that could be related to its inert structure under irradiation exposure. We strategized to explore the high thermal stability and molecular rigidity of oligomeric noria-based compounds as a functional organic matrix to embed inorganic component BTA to address the vertical shrinkage issue through controlling ligand loss from inorganic components during nanopatterning.…”

Section: Introductionmentioning

confidence: 99%

Macrocycle Network-Aided Nanopatterning of Inorganic Resists on Silicon

Nandi

Khillare

Moinuddin

et al. 2022

ACS Appl. Nano Mater.

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Inorganic resists have emerged as promising candidates in semiconductor industries to realize sub-10 nm node technology. However, controlling vertical shrinkage of resist films during the pattern development process, particularly for ultralow thin film applications, is among the highly pressing limitations of inorganic resists along with pattern roughness and poor resist shelf-life characteristics. Tin-based clusters and small molecules have been recently introduced as resist materials. They possess a high absorption coefficient and fast solubility transitions under irradiation exposure. As we investigated, n-butylstannoic acid (BTA) showed ∼38% vertical shrinkage when its film was exposed with deep ultraviolet photons (DUV, ∼254 nm) and could pattern features of ∼120 nm. We hypothesized and experimentally validated an approach that provided control on shrinkage issues, along with improving its patterning potential to sub-15 nm regime. In our approach, BTA was embedded into a polyhydroxy organic host matrix composed of noria (water-wheel-like macrocycle) derivatives. The rigid molecular cage structure and photo-inert nature of noria (N-Me) were utilized as the host matrix that apprehended the inorganic resist material within its intermolecular space. Ultrathin films (∼20 nm) were coated on silicon, and various nanofeatures including 10 nm lines, meshlike grids with 10 nm width, complex patterns, and so forth were patterned using electron beam and helium ion beam lithography. Most importantly, we were able to drastically reduce the vertical shrinkage to ∼13% with respect to initial thickness, which substantiates the potential of our hypothesis. We also noticed good shelf-life (6 months), good etch resistance, and low line edge roughness (LER)/line width roughness (LWR) for the developed resist composition.

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Section: Introductionmentioning

confidence: 99%

Macrocycle Network-Aided Nanopatterning of Inorganic Resists on Silicon

Nandi

Khillare

Moinuddin

et al. 2022

ACS Appl. Nano Mater.

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“…Self Aligned Double Patterning [4] for 3x nm and 2x nm. Further size reduction requires triple or quadruple patterning, and it causes huge increase of CoO and the difficulty of overlay [5] Extreme ultraviolet (EUV) lithography has been the favorite candidate of successor of immersion ArF [6][7][8]. Except EUV lithography, other lithography candidates, i.e., multi patterning, nanoimprint, mask less lithography, and DSA are also investigated.…”

Section: Introductionmentioning

confidence: 99%

Directed Self Assembly Materials for Semiconductor Lithography

Minegishi¹,

Naruoka²,

Nagai³

2013

J. Photopol. Sci. Technol.

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The Directed Self Assembly (DSA) method is becoming a key complementary technology for enabling lithographic pattern feature shrinkage. Recent DSA technology has developed remarkable improvements in many aspects of materials and process. Block co-polymer, especially polystyrene-block-polymethylmethacrylate (PS-b-PMMA) is the standard DSA patterning material for lithography. However, the patterning limit of PS-b-PMMA is about 25nmP, and high-χ block co-polymer is necessary for sub 20nmP patterning. Not only block co-polymer, but also underlayer (neutral layer, pinning layer), top coat, and directing pattern forming photoresist are also necessary. In this paper, recent progress of directed self assembly materials and supporting materials are described.

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“…Self Aligned Double Patterning [4] for 3x nm and 2x nm. Further size reduction requires triple or quadruple patterning, and it causes huge increase of CoO and the difficulty of overlay [5] Extreme ultraviolet (EUV) lithography has been the favorite candidate of successor of immersion ArF [6][7][8][9][10][11][12][13][14][15][16][17][18][19][20][21][22][23][24] [26][27][28][29][30][31][32][33][34]. Application of DSA materials may extend immersion ArF and support the rise of EUV.…”

Section: Introductionmentioning

confidence: 99%

Directed Self Assembly Material Development for Fine Patterning and Pattern Repair

Minegishi¹,

Namie²,

Izumi³

et al. 2013

J. Photopol. Sci. Technol.

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The Directed Self-Assembly (DSA) method is becoming a key complementary technology for enabling lithographic pattern feature shrinkage. Recent DSA technology has developed remarkable improvements in many aspects of materials and process. Polystyreneb-polymethylmethacrylate (PS-b-PMMA) block copolymer (BCP) is a typical material used in DSA, but more advanced materials are required for achieving patterning less than 10 nm in size. High-χ block copolymers are being researched as next generation PS-b-PMMA material successors. Polymers with high-χ produce smaller pattern sizes than PS-b-PMMA. However, doing DSA with these high-χ materials requires a special method to separate one phase of BCPsuch as phase separation in solvent. We have done further research to improve high-χ materials to enable better DSA technology. Here we report 8.4 nm half-pitch line patterns were formed with our high-χ block co-polymer, annealing under air. DSA is a candidate for next generation lithography. However, DSA materials are not used alone. DSA materials are always used with guide pattern to "direct" self assembly materials. Currently ArF resist is well studied as guide pattern. ArF resist is extended to use further generation, but the required resolution level is already severe for 193nm patterning. Employment of blend DSA could improve the ArF pattern profile.

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Novel Material Development for EUV Resist towards sub-20nm half pitch

Cited by 12 publications

References 6 publications

Macrocycle Network-Aided Nanopatterning of Inorganic Resists on Silicon

Macrocycle Network-Aided Nanopatterning of Inorganic Resists on Silicon

Directed Self Assembly Materials for Semiconductor Lithography

Directed Self Assembly Material Development for Fine Patterning and Pattern Repair

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