2011
DOI: 10.1557/mrs.2011.240
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Novel materials by atomic layer deposition and molecular layer deposition

Abstract: Over the past 10 years, the number of materials that can be processed by atomic layer deposition (ALD) has expanded rapidly. Signifi cant progress has been seen in ALD of high-κ oxides, ternary oxides, and noble metals, which have been studied quite extensively. High-κ oxide processes are used today in various industrial applications. However, many new applications are pushing the need for less common compounds, and therefore new processes are being developed (e.g., for fl uorides, Li containing compounds, and… Show more

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Cited by 50 publications
(33 citation statements)
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“…[1][2][3][4][5][6][7][8][9][10][11][12][13] For example, the insertion of organic or organometallic species into layered inorganic compounds can lead to original nanosized organic/inorganic, inorganic/inorganic, or bio/ inorganic functional heterostructures. [1][2][3][4][5][6][7][8][9][10][11][12][13] For example, the insertion of organic or organometallic species into layered inorganic compounds can lead to original nanosized organic/inorganic, inorganic/inorganic, or bio/ inorganic functional heterostructures.…”
Section: Introductionmentioning
confidence: 99%
“…[1][2][3][4][5][6][7][8][9][10][11][12][13] For example, the insertion of organic or organometallic species into layered inorganic compounds can lead to original nanosized organic/inorganic, inorganic/inorganic, or bio/ inorganic functional heterostructures. [1][2][3][4][5][6][7][8][9][10][11][12][13] For example, the insertion of organic or organometallic species into layered inorganic compounds can lead to original nanosized organic/inorganic, inorganic/inorganic, or bio/ inorganic functional heterostructures.…”
Section: Introductionmentioning
confidence: 99%
“…Within the ALD window, it is necessary that a full coverage of monolayer can be realized by the precursor pulse, and the surface reactions will stop by themselves owing to the exhaustion of surface active sites, which endows ALD with a stable GPC and makes it insensitive to any further increase of the pulse length. By this stable GPC coming from the self-limiting reactions, the uniform and ultrathin MoS 2 films can grow on the substrates even with complex structures, such as wires, powders, tubes, and holes/pores [25][26][27], which are the uniqueness of ALD. According to the crystallinity and orientation of the MoS 2 films, not only the precursors but also the substrates play an important role in ALD of MoS 2 .…”
Section: Ald Substrates Of Mosmentioning
confidence: 99%
“…The chemical reaction in time sequence can be broken by dividing a complete reaction into two halfreactions in one ALD cycle. One half-reaction cannot stop until the active sites at the surface are depleted, then beginning the other half-reaction [23][24][25][26][27]. During the ALD, the chemical reaction on a new atomic layer is directly related to the previous layer, which makes every reaction only deposit one atomic layer.…”
Section: Introductionmentioning
confidence: 99%
“…Whereas ALD uses exclusively inorganic precursors to deposit solid materials, MLD uses bifunctional organic molecules in addition to the usual inorganic precursors to prepare hybrid materials. [21] [22][23] [24][25] Several MLD processes have been developed for hybrid organic-inorganic films based on metal precursors and organic alcohols to yield metal alkoxide films which are described as "metalcones". [3][4] [5][26] [27] As a prototypical example, hybrid organic-inorganic thin films based on aluminium oxide can be produced using metal alkyls a. Tyndall National Institute, University College Cork, Lee Maltings, Dyke Parade, Cork T12 R5CP, Ireland b.…”
Section: Introductionmentioning
confidence: 99%