Novel Metal-Insulator Transition at the 
<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mrow><mml:mi>SmTiO</mml:mi></mml:mrow><mml:mn>3</mml:mn></mml:msub><mml:mo>/</mml:mo><mml:msub><mml:mrow><mml:mi>SrTiO</mml:mi></mml:mrow><mml:mn>3</mml:mn></mml:msub></mml:mrow></mml:math>
 Interface

Ahadi, Kaveh; Stemmer, Susanne

doi:10.1103/physrevlett.118.236803

Cited by 39 publications

(11 citation statements)

References 43 publications

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“…Xray diffraction (XRD) showed that the films were single-phase and thickness fringes indicated ) from the nominal doping concentration. It shows some temperature dependence, which may indicate some carrier trapping but can also be a result of the particular 5 behavior of Hall and resistance scattering rates, typical for these oxides, as discussed elsewhere [21,22]. Similar behavior was reported previously for La [17] and Nb [23]-doped EuTiO3 and is due to the alignment of the localized spins under the magnetic field, which reduces the resistance.…”

supporting

confidence: 79%

Evidence of a topological Hall effect in Eu1−xSmxTiO3

Ahadi

Galletti

Stemmer

2017

Applied Physics Letters

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We report on the observation of a possible topological Hall effect in thin films of the itinerant ferromagnet Eu1−xSmxTiO3. EuTiO3 and Eu0.955Sm0.045TiO3 films were grown by molecular beam epitaxy. The EuTiO3 film is insulating. The Hall resistivity of the Eu0.955Sm0.045TiO3 films exhibits the anomalous Hall effect below the Curie temperature of ∼5 K and additional features that appear at 2 K. It is shown that these features are magnetic in origin and consistent with the topological Hall effect seen in material systems with topologically nontrivial spin textures such as skyrmions. The results open up interesting possibilities for epitaxial hybrid heterostructures that combine topological magnetic states, tunable carrier densities, and other phenomena.

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supporting

confidence: 79%

Evidence of a topological Hall effect in Eu1−xSmxTiO3

Ahadi

Galletti

Stemmer

2017

Applied Physics Letters

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“…The availability of virtual substrates will drive innovation at the fundamental level and speed up the process development from basic scientific discoveries to system level maturity, thus boosting research productivity and technological significance of functional epitaxial oxide thin films. While accessing a self-regulated growth window at high growth rates was demonstrated for SrTiO 3 as a prototypical perovskite oxide, many ABO 3 perovskites (ABO 3 , A = Ca 43 , Sr 40 , Ba 44 , Gd 45 , Nd 46 , Sm 47 with B = Ti; A = Sr 48 , Ca 49 , La 50 with B = V; as well as LaAlO 3 25 , BaSnO 3 51 , and SrRuO 3 52 ) have already been sucessfully grown by hybrid MBE. This suggests that scaling growth rates is a general feature of this growth approach rather than being limited to SrTiO 3 , indicating that the development of virtual substrates for perovskite oxides can be expanded to other perovskite oxides in an economic, scalable way as well.…”

Section: Discussionmentioning

confidence: 99%

Scaling growth rates for perovskite oxide virtual substrates on silicon

et al. 2019

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The availability of native substrates is a cornerstone in the development of microelectronic technologies relying on epitaxial films. If native substrates are not available, virtual substrates - crystalline buffer layers epitaxially grown on a structurally dissimilar substrate - offer a solution. Realizing commercially viable virtual substrates requires the growth of high-quality films at high growth rates for large-scale production. We report the stoichiometric growth of SrTiO 3 exceeding 600 nm hr −1 . This tenfold increase in growth rate compared to SrTiO 3 grown on silicon by conventional methods is enabled by a self-regulated growth window accessible in hybrid molecular beam epitaxy. Overcoming the materials integration challenge for complex oxides on silicon using virtual substrates opens a path to develop new electronic devices in the More than Moore era and silicon integrated quantum computation hardware.

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“…Unlike the lightly doped SrTiO 3 films discussed in the previous section, this electron system is degenerate. The resistance is ~ T 5/3 above ~100 K, while the Hall angle is always ~ T 2 [69]. Lifetime separation was also investigated in quantum wells of SrTiO 3 [57,70], such as formed in SmTiO 3 /SrTiO 3 / SmTiO 3 heterostructures, which contain mobile charge densities on order of 7 × 10 14 cm −2 and which exhibit numerous correlated phenomena, such as itinerant magnetism and pseudo gaps, when their thicknesses are reduced to a few atomic planes.…”

Section: Hall Mobility or Hall Anglementioning

confidence: 99%

“…Note that the LO phonon scattering term at high temperatures, which is clearly seen for the low density, 3D electron gas in figure 1(b), is absent here, due to the screening of the LO phonons at the high electron density. Data is from [69].…”

Section: T N Power Laws In the Electrical Resistivitymentioning

confidence: 99%

Non-Fermi liquids in oxide heterostructures

Stemmer

Allen

2018

Rep. Prog. Phys.

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Understanding the anomalous transport properties of strongly correlated materials is one of the most formidable challenges in condensed matter physics. For example, one encounters metal-insulator transitions, deviations from Landau Fermi liquid behavior, longitudinal and Hall scattering rate separation, a pseudogap phase, and bad metal behavior. These properties have been studied extensively in bulk materials, such as the unconventional superconductors and heavy fermion systems. Oxide heterostructures have recently emerged as new platforms to probe, control, and understand strong correlation phenomena. This article focuses on unconventional transport phenomena in oxide thin film systems. We use specific systems as examples, namely charge carriers in SrTiO layers and interfaces with SrTiO, and strained rare earth nickelate thin films. While doped SrTiO layers appear to be a well behaved, though complex, electron gas or Fermi liquid, the rare earth nickelates are a highly correlated electron system that may be classified as a non-Fermi liquid. We discuss insights into the underlying physics that can be gained from studying the emergence of non-Fermi liquid behavior as a function of the heterostructure parameters. We also discuss the role of lattice symmetry and disorder in phenomena such as metal-insulator transitions in strongly correlated heterostructures.

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Novel Metal-Insulator Transition at the SmTiO3/SrTiO3 Interface

Cited by 39 publications

References 43 publications

Evidence of a topological Hall effect in Eu1−xSmxTiO3

Evidence of a topological Hall effect in Eu1−xSmxTiO3

Scaling growth rates for perovskite oxide virtual substrates on silicon

Non-Fermi liquids in oxide heterostructures

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