2020
DOI: 10.3390/nano10030538
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Novel Method for Electroless Etching of 6H–SiC

Abstract: In this article, we report an electroless method to fabricate porous hexagonal silicon carbide and hexagonal silicon carbide nanoparticles (NPs) as small as 1 nm using wet chemical stain etching. We observe quantum confinement effect for ultrasmall hexagonal SiC NPs in contrast to the cubic SiC NPs. We attribute this difference to the various surface terminations of the two polytypes of SiC NPs.

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Cited by 6 publications
(4 citation statements)
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“…Most MAX phases can be etched with hydrofluoric acid at various temperatures to produce different MXenes, depending on the different HF parameters such as concentration and environmental conditions like room temperature (figures 3(a)-(d)) table 2 [70,84,[97][98][99][100]. HF has very high selectivity as an etchant, allowing it to selectively remove distinct kinds of SiC [101]. The etching conditions for the MAX phase containing Al vary based on different factors such as particle size, atomic bond, and structure of transition metal [102].…”
Section: Max Phase Etching By Hydrofluoric Acidmentioning
confidence: 99%
“…Most MAX phases can be etched with hydrofluoric acid at various temperatures to produce different MXenes, depending on the different HF parameters such as concentration and environmental conditions like room temperature (figures 3(a)-(d)) table 2 [70,84,[97][98][99][100]. HF has very high selectivity as an etchant, allowing it to selectively remove distinct kinds of SiC [101]. The etching conditions for the MAX phase containing Al vary based on different factors such as particle size, atomic bond, and structure of transition metal [102].…”
Section: Max Phase Etching By Hydrofluoric Acidmentioning
confidence: 99%
“…Even though SiC is highly resistant to many etchants, [ 55 ] wet etching has enabled the fabrication of the smallest SiC particles to date, with diameters of 1–3 nm. [ 7,37,56 ] Different SiC polytypes and crystal facets show different etching rates, which have been employed to facilitate the etching process while controlling the shape and size of etched particles. [ 55,57 ] Compared to milling, the NPs created via etching are usually smaller (<10 nm) and have a much narrower size distribution.…”
Section: Sic Nanoparticlesmentioning
confidence: 99%
“…At present, the oxidants used for CMP are usually hydrogen peroxide [5][6][7], hydrogen fluoride [8], potassium permanganate [9,10] and so on. There are many effective ways based on CMP to polish SiC, such as electrochemical mechanical polishing [11], chemical etching [12], etc. Su Jianxiu et al [13] studied the effects of pH value of polishing slurry composition, abrasive size, abrasive concentration, dispersant concentration, oxidant concentration and polishing process parameters on the material removal rate of SiC polished by alumina abrasive.…”
Section: Introductionmentioning
confidence: 99%