Novel model of a AlGaN/GaN high electron mobility transistor based on an artificial neural network*

Cheng, Zhiqun; Hu, Sha; Liu, Jun; Zhang, Qi‐Jun

doi:10.1088/1674-1056/20/3/036106

Cited by 4 publications

(4 citation statements)

References 9 publications

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“…MOCVD (Metal-Organic Chemical Vapor Deposition) technology is a key technology of fabrication of GaN-based optoelectronic and microwave high-power devices, such as blue-light-emitting and high-power laser diodes [1][2][3]. Presently, the third generation semiconductor industry, with GaN and nitride compounds as the typical representatives, develops very fast, especially in the semiconductor lighting industry [4][5][6][7]. The MOCVD method, which is used to grow the GaN epitaxial film in a large scale, is a key technique.…”

Section: Introductionmentioning

confidence: 99%

A Kind of Coating Method of GaN‐MOCVD Graphite Susceptor

et al. 2013

Journal of Nanomaterials

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A novel coating method for the GaN-MOCVD graphite susceptor is proposed in the paper, which means that the upper surface and sides of the graphite susceptor are covered with a low emissivity material coating, and the surface under the susceptor is covered with a high emissivity SiC coating. By using finite element analysis software COMSOL Multiphysics, the temperature field of the susceptors without coating, with common SiC coating, and with improved coating is obtained and compared, which shows that the susceptor with the improved coating not only increases the heating efficiency of the heater, but also improves the temperature uniformity of the substrate, which can be of great benefit to the film growth. In addition, this improved coating for the susceptor has the same heating sensitivity as the common SiC coating.

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Section: Introductionmentioning

confidence: 99%

A Kind of Coating Method of GaN‐MOCVD Graphite Susceptor

et al. 2013

Journal of Nanomaterials

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“…Using MOCVD (metal-organic chemical vapor deposition) to analyze the growth of GaN-base photoelectric devices on the sapphire substrate is a common method in the semiconductor lighting industry [1][2][3][4][5]. In recent years, along with the unceasing enhancement of epitaxy technology and related technologies, larger sapphire substrates are needed.…”

Section: Introductionmentioning

confidence: 99%

Simulation and Analysis of GaN Wafer Bowing on Sapphire Substrate

Wang¹,

Yu-xuan²,

et al. 2013

Advances in Condensed Matter Physics

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During the process of heteroepitaxial growth, if the lattice constant of the growing film differs from that of the substrate, the wafer surface bows, regardless of whether the lattice mismatch occurs or not. As the growth in large-scale wafers speeds up, bowing effects are becoming more and more important. Wafer bowing has a direct impact on the yield in modern mass-production compound semiconductor industries. By using finite element analysis software, the bowing deformation of the GaN wafer on sapphire substrate can be studied. This paper summarizes the causes of bowing deformation, builds the mathematical model, and deduces the relation equation of the wafer bowing. The results show that epitaxial wafer bowing has a linear relationship with the square of the diameter of the substrate but has little relationship with the thickness of the substrate. Moreover, the relation equation of the wafer bowing is also simplified finally.

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“…Computer‐aided design (CAD) technique has become an important and necessary tool for designing circuits and systems. So AIGaN/GaN HEMT as an actively developing device needs to be accurately modelled, thereby well designing the circuits and systems .…”

Section: Introductionmentioning

confidence: 99%

A Novel Modeling of Millimeter‐Wave Al_0.27Ga_0.73N/AlN/GaN Hemt Based on Artificial Neural Network

Cheng

Zhang³

2013

Micro & Optical Tech Letters

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An artificial neural network (ANN) was used for modeling millimeter‐wave Al0.27Ga0.73N/AlN/GaN high electron mobility transistor (HEMT) with multi‐biases in this article. Millimeter‐wave Al0.27Ga0.73N/AlN/GaN HEMT with gate width of 2 × 75 µm and gate length of 0.3 µm was designed and fabricated at first, and then its performance was measured for modeling. NeuroModelerPlus_V2.1E software was trained to learn the input‐output relationship from the data about DC and AC performances of proposed device. ANN DC model and AC model were set up and embedded in software of ADS together to form a model of millimeter‐wave Al0.27Ga0.73N/AlN/GaN HEMT, which can be used in circuit design. The results of the simulation of the model showed that it corresponded with the measurement results. © 2013 Wiley Periodicals, Inc. Microwave Opt Technol Lett 55:2124–2127, 2013

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Novel model of a AlGaN/GaN high electron mobility transistor based on an artificial neural network*

Cited by 4 publications

References 9 publications

A Kind of Coating Method of GaN‐MOCVD Graphite Susceptor

A Kind of Coating Method of GaN‐MOCVD Graphite Susceptor

Simulation and Analysis of GaN Wafer Bowing on Sapphire Substrate

A Novel Modeling of Millimeter‐Wave Al_0.27Ga_0.73N/AlN/GaN Hemt Based on Artificial Neural Network

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Novel model of a AlGaN/GaN high electron mobility transistor based on an artificial neural network*

Cited by 4 publications

References 9 publications

A Kind of Coating Method of GaN‐MOCVD Graphite Susceptor

A Kind of Coating Method of GaN‐MOCVD Graphite Susceptor

Simulation and Analysis of GaN Wafer Bowing on Sapphire Substrate

A Novel Modeling of Millimeter‐Wave Al0.27Ga0.73N/AlN/GaN Hemt Based on Artificial Neural Network

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A Novel Modeling of Millimeter‐Wave Al_0.27Ga_0.73N/AlN/GaN Hemt Based on Artificial Neural Network