Novel multi resonant ZVS high frequency power converter with high efficiency power conversion

Hatanaka, Y.; Yoshida, Daichi; Hiroyasu, Kitamura

doi:10.1109/epe.2005.219528

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2009

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Cited by 4 publications

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“…This loss is usually caused by rapid switching transition of ON and OFF in the transistors. Where switching loss is a variable parameter that consistently changes with respect to variation in L r , T D and D, this can be reduced by adopting snubber network [18][19][20].…”

Section: Resultsmentioning

confidence: 99%

The Analysis of Parameter Limitation in Diode-Clamped Resonant Gate Drive Circuit

Yahaya¹,

Begam²,

Awan³

2010

IJET

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Switching loss has to be reduced in order to improve converter's performance and efficiency. In high switching frequency, the effect of the loss is much greater. The duty ratio, dead time and inductor value are the limiting parameters which bring implications on the switching loss and hence total gate drive loss. Using PSpice circuit simulator, the optimization of these parameters have been carried out and it is found that the duty ratio, dead time and resonant inductor value are 20 %, 15 ns and 9 nH respectively. The details for choosing these values are presented in this paper.

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Section: Resultsmentioning

confidence: 99%