Novel N/PFET Vt control by TiN plasma nitridation for aggressive gate scaling

Togo, M.; Tong, Weihua; Zhang, X.; Triyoso, Dina H.; Lian, J.; Randriamihja, Y. Mamy; Uppal, S.; Dağ, S.; Cruz‐Silva, Eduardo; Kota, Murali; Shimizu, Takashi; Patil, Suraj; Eller, M.; Samavedam, S.

doi:10.1109/vlsit.2016.7573436

2016 IEEE Symposium on VLSI Technology 2016

DOI: 10.1109/vlsit.2016.7573436

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Novel N/PFET Vt control by TiN plasma nitridation for aggressive gate scaling

M. Togo

Weihua Tong

X. Zhang

et al.

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2018

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“…16 Among these new technologies, the approach of nitrogen plasma treatment on the multi-layer high-k/metal-gate (HKMG) stack demonstrates a simplified process cost and a strong modulation ability; several initial experimental results and hypothetical predictions are published. [17][18][19] However, by now, there have been no any systematical investigations reported on this method with different plasma treatment process parameters and a detailed physical analysis and a theoretical model.…”

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confidence: 99%

Comparative Investigation of Flat-Band Voltage Modulation by Nitrogen Plasma Treatment for Advanced HKMG Technology

Yao

Gao

et al. 2018

ECS J. Solid State Sci. Technol.

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This paper presents a comparative investigation of flatband voltage (V FB ) adjustment scheme with the nitrogen plasma treatment (NPT) in the high-k/metal-gate (HKMG) Metal-Oxide-Semiconductor Capacitor (MOSCAP) for scaling of the further CMOS fabrication technology. The NPT process on the first ALD-TiN capping layer demonstrates significant V FB modulation capability and causes a controllable effective gate work function in metal-gate: 1) shifting to band center with the increasing of RF powers both for P-/N-MOSCAPs; 2) shifting to opposite directions (P-to band edge, N-to band center) with reduced nitrogen flow ratio for P-/N-MOSCAPs; 3) shifting from −220mV to +60mV and from +130mV to +420mV for P-/N-MOSCAPs, respectively. One unique theoretical model including N-vacancy/Al-trap effect is successfully proposed to illustrate the complicated shift behaviors both for HKMG P-/N-MOSCAPs. The demonstrated process results and the physical model indicate that the advanced NPT technology is a simple, effective and CMOS-compatible method for both P-/N-logic devices scaling beyond 7nm technology node.

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mentioning

confidence: 99%

Comparative Investigation of Flat-Band Voltage Modulation by Nitrogen Plasma Treatment for Advanced HKMG Technology

Yao

Gao

et al. 2018

ECS J. Solid State Sci. Technol.

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Novel N/PFET Vt control by TiN plasma nitridation for aggressive gate scaling

Cited by 1 publication

References 0 publications

Comparative Investigation of Flat-Band Voltage Modulation by Nitrogen Plasma Treatment for Advanced HKMG Technology

Comparative Investigation of Flat-Band Voltage Modulation by Nitrogen Plasma Treatment for Advanced HKMG Technology

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