Novel nitrogen/gallium precursor [Ga(bdma)H2] for MOVPE

This is a report on the first setup of a recently developed, extremely sensitive and very fast 3D quadrupole ion trap mass spectrometer inline in a metalorganic vapour phase epitaxy (MOVPE) system. This setup was developed ultimately for the decomposition- and the interaction analysis of various established as well as novel metalorganic sources for MOVPE deposition of III/V semiconductors. To make in-situ gas phase and growth interaction analysis on a new level of sensitivity possible without disturbing the MOVPE growth process itself, an optimized experimental connection of the mass spectrometer to the MOVPE system is required. This work reports on the realization of such an experimental setup and provides first proof of concept for decomposition analysis. In addition, a comparison to previous studies and gas-phase analysis at MOVPE systems will be given in this work.

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Novel nitrogen/gallium precursor [Ga(bdma)H2] for MOVPE

Cited by 3 publications

References 20 publications

Molecular Beam Epitaxy of Dilute Nitride Optoelectronic Devices

Molecular Beam Epitaxy of Dilute Nitride Optoelectronic Devices

Metalorganic vapor phase epitaxy of III–V-on-silicon: Experiment and theory

An experimental approach for real time mass spectrometric CVD gas phase investigations

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