2009
DOI: 10.1149/1.3207645
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Novel Precursors for the MOCVD of Molybdenum Nitride

Abstract: Tungsten nitride and molybdenum nitride are electrically conducting refractory metal nitrides. Their applicability as novel gate electrode materials in CMOS technology is actually under investigation. MOCVD is one of the most prominent processes to deposit thin films of these materials. In order to improve the quality of MOCVD grown thin films it is important to optimize the chemical design of the employed precursors. Herein, we report on the synthesis of different imido-guanidinato-molybdenum complexes like [… Show more

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Cited by 12 publications
(23 citation statements)
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“…For example, bis­( tert -butylimido)-bis­(dimethylamido)­molybdenum­(VI) ( A ) has been used as a precursor for the ALD of MoN x , , MoO 3 , , MoS 2 , MoC x N y , , TiMo x N y , and Al:MoS 2 pyrazolates ( C ), guanidinates ( D ), and diazabutadienyls ( E ) . However, only the amidinate B has been used for ALD to prepare MoO 3 films with O 3 .…”
Section: Introductionmentioning
confidence: 99%
“…For example, bis­( tert -butylimido)-bis­(dimethylamido)­molybdenum­(VI) ( A ) has been used as a precursor for the ALD of MoN x , , MoO 3 , , MoS 2 , MoC x N y , , TiMo x N y , and Al:MoS 2 pyrazolates ( C ), guanidinates ( D ), and diazabutadienyls ( E ) . However, only the amidinate B has been used for ALD to prepare MoO 3 films with O 3 .…”
Section: Introductionmentioning
confidence: 99%
“…For example, bis(tert-butylimido)bis(dimethylamido)molybdenum(VI) (A) has been used as a precursor for the ALD of MoNx, [11,12] MoO3, [13,14] MoS2, [15][16][17] MoCxNy, [18,19] TiMoxNy, [20] and Al:MoS2. [21] N,N'-chelating ligands have also been used to prepare volatile bis(tert-butylimido)molybdenum(VI) compounds, such as amidinates (B), [22] pyrazolates (C), [10] guanidinates (D), [23] and diazabutadienyls (E). [24] However, only the amidinate B has been used for ALD to prepare MoO3 films with O3.…”
Section: Introductionmentioning
confidence: 99%
“…It has been used as a precursor for the ALD of MoN x , MoO 3 , , MoS 2 , , and MoC x N y , but it has not yet been reduced to molybdenum metal. This precursor is typically prepared from ( t -BuN) 2 MoCl 2 , which is often isolated as the hexacoordinate 1,2-dimethoxyethane (dme) complex 1 . , Others have treated 1 with anionic N,N′-chelating ligands, such as guanidinates (which have yet to find success for Mo ALD) and amidinates, which have recently been used with O 3 to prepare MoO 3 films . Deposition of Mo metal from such compounds appears challenging, possibly due to the high nitrogen content in the ligands.…”
Section: Introductionmentioning
confidence: 99%