Novel pseudoalloy approach to epitaxial growth of complex InGaAlAs multilayer structures

Fritz, I. J.; Klem, J.F.; Hafich, M. J.; Howard, A. J.

doi:10.1063/1.113442

Cited by 4 publications

(1 citation statement)

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“…The properties of these SPSLs resemble those of random alloys of similar compositions [1]. SPSL materials have been shown to be an attractive replacement for ternary [2] and quaternary [3,4] alloys in device applications due to the ability to suppress the propagation of defects [5,6] and the highly advantageous ability to change alloy effective composition without source temperature changes during molecular beam epitaxy (MBE) growth. Recently, the wide-bandgap Zn x Cd 1–x Se/Zn x Cd y Mg 1–x–y Se material system lattice matched to InP has been shown to be an excellent candidate for several novel device applications.…”

Section: Introductionmentioning

confidence: 99%

Growth and properties of wide bandgap (MgSe)n(ZnxCd1−xSe)m short-period superlattices

Garcia

Tamargo

2017

Journal of Crystal Growth

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We report the molecular beam epitaxy (MBE) growth and properties of (MgSe)n(ZnxCd1–x Se)m short-period superlattices(SPSLs) for potential application in II–VI devices grown on InP substrates. SPSL structures up to 1 μm thick with effective bandgaps ranging from 2.6 eV to above 3.42 eV are grown and characterized, extending the typical range possible for the ZnxCdyMg1–x–ySe random alloy beyond 3.2 eV. Additionally, ZnxCd1–xSe single and multiple quantum well structures using the SPSL barriers are also grown and investigated. The structures are characterized utilizing reflection high-energy electron diffraction, X-ray reflectance, X-ray diffraction and photoluminescence. We observed layer-by-layer growth and smoother interfaces in the QWs grown with SPSL when compared to the ZnxCdyMg1–x–ySe random alloy. The results indicate that this materials platform is a good candidate to replace the random alloy in wide bandgap device applications.

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Section: Introductionmentioning

confidence: 99%

Growth and properties of wide bandgap (MgSe)n(ZnxCd1−xSe)m short-period superlattices

Garcia

Tamargo

2017

Journal of Crystal Growth

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Band Engineering of ErAs:InGaAlBiAs Nanocomposite Materials for Terahertz Photoconductive Switches Pumped at 1550 nm

Acuna,

Wu,

Bork

et al. 2024

Adv Funct Materials

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Terahertz technology has the potential to have a large impact in myriad fields, such as biomedical science, spectroscopy, and communications. Making these applications practical requires efficient, reliable, and low‐cost devices. Photoconductive switches (PCS), devices capable of emitting and detecting terahertz pulses, are a technology that needs more efficiency when working at telecom wavelength excitation (1550 nm) to exploit the advantages this wavelength offers. ErAs:InGaAs is a semiconductor nanocomposite working at this energy; however, high dark resistivity is challenging due to a high electron concentration as the Fermi level lies in the conduction band. To increase dark resistivity, ErAs:InGaAlBiAs material is used as the active material in a PCS detecting Terahertz pulses. ErAs nanoparticles reduce the carrier lifetime to subpicosecond values required for short temporal resolution, while ErAs pins the effective Fermi level in the host material bandgap. Unlike InGaAs, InGaAlBiAs offers enough freedom for band engineering to have a material compatible with a 1550 nm pump and a Fermi level deep in the bandgap, meaning low carrier concentration and high dark resistivity. Band engineering is possible by incorporating aluminum to lift the conduction band edge to the Fermi level and bismuth to keep a bandgap compatible with 1550 nm excitation.

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Digital alloy growth in mixed As/Sb heterostructures

Kaspi

Donati

2003

Journal of Crystal Growth

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Novel pseudoalloy approach to epitaxial growth of complex InGaAlAs multilayer structures

Abstract: Articles you may be interested inGrowth of high density self-organized (In,Ga)As quantum dots with ultranarrow photoluminescence linewidths using buried In(Ga,Al)As stressor dots

Cited by 4 publications

References 4 publications

Growth and properties of wide bandgap (MgSe)n(ZnxCd1−xSe)m short-period superlattices

Growth and properties of wide bandgap (MgSe)n(ZnxCd1−xSe)m short-period superlattices

Band Engineering of ErAs:InGaAlBiAs Nanocomposite Materials for Terahertz Photoconductive Switches Pumped at 1550 nm

Digital alloy growth in mixed As/Sb heterostructures

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