Novel slurry solution for dishing elimination in copper process beyond 0.1-μm technology

Chen, K. W.; Wang, Y. L.; Liu, Chuan‐Pu; Chang, Li; Li, F. Y.

doi:10.1016/j.tsf.2005.07.061

Cited by 20 publications

(24 citation statements)

References 16 publications

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“…The increase of the polishing temperature might be related to the friction energy induced by the abrasive concentration which might accelerate the cycle of the chemical dissolution and the formation of a soluble passivation layer. Chen et al (2006) confirmed the protective layer generated by the inhibitor with the concentration ratio of N to Cu, which indicates that the ratio of N to Cu can indicate the surface characteristic of the copper surface immersed into the slurry. They showed that the coverage amount of the protective layers and the inhibitor on the copper surface decreased while the pressure increased.…”

Section: Effect Of Abrasive Concentration On the Materials Removal Ratsupporting

confidence: 57%

Mechanical effect of colloidal silica in copper chemical mechanical planarization

Lee

Joo

Jeong

2009

Journal of Materials Processing Technology

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Section: Effect Of Abrasive Concentration On the Materials Removal Ratsupporting

confidence: 57%

Mechanical effect of colloidal silica in copper chemical mechanical planarization

Lee

Joo

Jeong

2009

Journal of Materials Processing Technology

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“…Region 1 is with a pressure-independent removal rate for the low pressure control ͑roughly around 0-1 psi, dependent on the oxidizer and additive type, pH value, and abrasive contents in the slurry system͒. 5,6,11 Region 2 is with a removal rate linearly increasing along with the pressure increasing ͑around 1-4 psi͒, i.e., fit for the original Preston's theory. The final region is a saturated region in the higher pressure ͑Ͼ4 psi͒, slowly increasing or saturated removal rate as the pressure kept rising.…”

Section: Resultsmentioning

confidence: 88%

“…Fortunately, the slurry with the passivated additives enhance the polishing planarization capability by providing a down-force buffer between the polishing abrasive and pad and forming a passivation film on the materials to compensate the different polishing rates due to various pattern features. 5 However, this type of slurry with passivated additives added would change the linear Preston's polishing behavior and exhibits a non-Preston's phenomenon, i.e., the removal rate ͑RR͒ is not positively proportional to down-force pressure ͑ P͒ and relative velocity ͑V͒ ͑RR k PV, where k is a proportional constant͒. Luo and Dornfeld 1 proposed that the non-Preston's behavior from the wafer-pad contact area transition changed with the ratio of the soft or hard materials covered on a surface.…”

mentioning

confidence: 99%

Study of Non-Preston Phenomena Induced from the Passivated Additives in Copper CMP

Chen

Wang

2007

J. Electrochem. Soc.

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The requirement for the superplanarization of interconnect nanotechnology beyond 100 nm poses an urgent need to study the complicated behavior of copper CMP. It is common practice in advanced copper chemical mechanical planarization ͑CMP͒ polishing to add the inhibitor into the slurry to keep the copper surface perfect and smooth and to protect the copper surface from corrosion. It is beneficial to have the polishing pressure cushion between abrasives and wafer under the different pattern features and is most important to overcome the planarization limitation. This study describes the behavior of non-Preston's phenomena under the passivated additives ͑inhibitors͒ and develops a model to explain the mechanism of the passivated-and-oxidated kinetics with non-Preston's polishing, which explains the mechanism of copper surface reactions during polishing. Furthermore, our model shows that the three regions are due to different relationships between removal rate and polishing pressure. Three regions are characterized as the threshold, linear, and saturated zones, which are governed by the chemical etching, the depth of abrasive particles indent into the copper oxide, and the oxidation rate, respectively. Most of all, the removal rate change can be simulated and predicted by the ratio between the inhibitor and oxidizer concentrations. Therefore, this study does not only contribute the understanding of the non-Preston's behavior but also provides the model under the assumption of the sequential stacked films of passivation and oxide films on the copper surface. The potentiodynamic methods are employed to test the assumption used in the mechanism and model.With the device shrunk down to nanoscale, the copper damascene process has been widely applied. The damascene process is not only addressed on copper gapfilling in different features of the interconnect but also achieved to the perfect and smooth copper surface without pit, microscratch, and corrosion defect after copper chemical mechanical planarization ͑Cu-CMP͒. In order to achieve an intact copper surface, in general, some inhibitors or surfactants are mixed into the slurry to reduce the defect. The additives cannot only provide the copper corrosion prevention with the inhibitors adsorbed in the copper surface but also lubricate the copper surface with the surfactant to decrease the fictions and scratching from the abrasion. For example, benzotriazole ͑BTA͒, tetrazole, tolytriazole, mercaptobenzoxazole, and triethanolamine ͑TEA͒ components are believed to be able to prevent the copper corrosion and surface lubrication. 1-5 Furthermore, these passivated additives also contribute to reduce the global dishing and erosion under various pattern densities and increase the planarization capability of nanometerscale features. The planarization capability enhancement from the passivated additives is intensively studied in literature 1-5 and considered as a critical issue on several important factors, such as the down-force on the features, the ratio of metal to dielectric pat...

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“…A limited number of studies have investigated the influences of the chemical components in the slurry on the dissolution contribution to the dishing phenomenon [15,16]. A better understanding of the slurry's influence on dishing, in particular the inhibitor characteristics, would be very beneficial for improved CMP performance.…”

Section: Introductionmentioning

confidence: 99%

Potassium sorbate as an inhibitor in copper chemical mechanical planarization slurries. Part II: Effects of sorbate on chemical mechanical planarization performance

Nagar

Vaes

Ein‐Eli

2010

Electrochimica Acta

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Novel slurry solution for dishing elimination in copper process beyond 0.1-μm technology

Cited by 20 publications

References 16 publications

Mechanical effect of colloidal silica in copper chemical mechanical planarization

Mechanical effect of colloidal silica in copper chemical mechanical planarization

Study of Non-Preston Phenomena Induced from the Passivated Additives in Copper CMP

Potassium sorbate as an inhibitor in copper chemical mechanical planarization slurries. Part II: Effects of sorbate on chemical mechanical planarization performance

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