Novel Sn-assisted nitridation of Ge/HfO<sub>2</sub> interface and improved electrical properties of the MOS capacitor

Zhao, Ming; Liu, Lei; Liang, Renrong; Wang, Jing; Xu, Jun

doi:10.7567/jjap.53.041301

Jpn. J. Appl. Phys.

2014

DOI: 10.7567/jjap.53.041301

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Novel Sn-assisted nitridation of Ge/HfO₂ interface and improved electrical properties of the MOS capacitor

Ming Zhao

Lei Liu

Renrong Liang

et al.

Abstract: The electrical properties of a Ge/HfO2 MOS capacitor with an ultrathin GeSnON interlayer were investigated. A high-quality GeSnON interlayer was formed by annealing a thin GeSn layer in NH3 ambient at 400 °C. The GeSn layer was fabricated by a unique processing method: a Sn layer was deposited on Ge substrates using a magnetron sputtering system, and then the top Sn layer was removed using diluted HCl solution, leaving an approximately 1-nm-thick GeSn layer. Through this method, the nitridation of the Ge/HfO2 … Show more

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Cited by 3 publications

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“…In addition, the separation in the flat-band (ΔV) of C-V hysteresis for MOSCAP is 0.25 V. The low interface state density (D it ) was extracted by use of the conventional Terman method near the midgap region. 24) The value of D it was 2.6 × 10 11 cm −2 • eV −1 . The oxide trapped charge densities (Q ot ) were extracted to be 9.925 × 10 11 cm −2 and the gate leakages of the MOSCAP were 7.01 × 10 −7 A cm −2 at a gate voltage of +1 V, as shown in Fig.…”

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confidence: 91%

“…10,11) Inserting high-permittivity (high-k) dielectrics could contribute to solving these problems because they offer a good gate modulation by using a larger dielectric constant. 12) HfO 2 is a good high-k dielectric candidate, since it has a relatively large band gap (5.6-5.9 eV) and a high relative permittivity (20)(21)(22)(23)(24)(25). [13][14][15] However, HfO 2 suffers from crystallization at low temperature, which causes a high leakage current along the grain boundaries.…”

mentioning

confidence: 99%

See 1 more Smart Citation

Investigation of band alignment between InAlAs and atomic-layer-deposited HfO₂/Al₂O₃ by X-ray photoelectron spectroscopy

Wu¹,

Miao²,

Li³

2019

Appl. Phys. Express

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Band alignments between atomic layer deposition (ALD) HfO2/Al2O3 double layers and InAlAs were investigated by angle-resolved X-ray photoelectron spectroscopy (AR-XPS). The relationship of As and Hf 4f peaks reducing with the decreasing take-off angle θ indicated upward band bending on the InAlAs surface and a potential gradient in the HfO2/Al2O3 layer. AR-XPS measurements were combined with numerical calculations. The valence band and conduction band discontinuity between HfO2/Al2O3 and InAlAs were 2.49 ± 0.2 eV and 1.86 ± 0.2 eV, respectively. A low leakage current density of 7.01 × 10−7 A cm−2 at 1 V and oxide trapped charge densities of 9.925 × 1011 cm−2 were obtained.

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mentioning

confidence: 91%

mentioning

confidence: 99%

Investigation of band alignment between InAlAs and atomic-layer-deposited HfO₂/Al₂O₃ by X-ray photoelectron spectroscopy

Wu¹,

Miao²,

Li³

2019

Appl. Phys. Express

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“…D it can be extracted from C-V curves by the Terman method. 26) The cross-sectional HRTEM image for HfO 2 =Al 2 O 3 = InAlAs is shown Fig. 4(a).…”

mentioning

confidence: 99%

Interfacial and electrical characterization of HfO₂/Al₂O₃/InAlAs structures

Zhang

et al. 2015

Jpn. J. Appl. Phys.

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The HfO2/Al2O3 double layer has been deposited by the atomic layer deposition (ALD) technique to a InAlAs epitaxial layer. The chemical composition at the interface was revealed by angle-resolved X-ray photoelectron spectroscopy (XPS). The electrical properties of the ALD-HfO2/Al2O3/InAlAs metal–oxide–semiconductor (MOS) capacitor have been investigated and compared with those of the ALD-HfO2/InAlAs capacitor. It is demonstrated that the insertion of the Al2O3 layer can decrease interfacial oxidation and trap charge formation. Compared with the HfO2/InAlAs capacitor, the HfO2/Al2O3/InAlAs capacitor exhibits better electrical properties with reduced hysteresis and decreasing stretch-out of the capacitance–voltage (C–V) characteristics, and the oxide trapped charge (Qot) value is significantly decreased after inserting the Al2O3 interlayer.

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Electrical properties of LaTiO high-k gate dielectric Ge MOS Capacitor and Ti content optimization

Huo-Xi¹,

Xu²

2016

Acta Phys. Sin.

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Ti is intentionally added into La2O3 to prepare LaTiO gate dielectric Ge metal-oxide-semiconductor (MOS) capacitor with both high k value and good interface quality. In order to examine the effects of Ti content on the electrical properties of the device, LaTiO films with different Ti/La2O3 ratios (10.6%, 18.4%, 25.7% and 31.5%) are deposited by reactively co-sputtering Ti and La2O3 targets. Capacitance-voltage curves, gate-leakage current properties and high-field stress characteristics of the devices are measured and analyzed. It is found that some electrical properties, such as interface-sate density, gate-leakage current, device reliability and k value, strongly depend on Ti content incorporated into La2O3. Ti incorporation can significantly increase the k value: the higher the Ti content, the larger the k value is. The relevant mechanism lies in the fact that higher Ti content leads to an increase of Ti-based oxide in the LaTi-based oxide, because Ti-based oxide has larger k value than La-based oxide. On the contrary, interface quality, gate-leakage current and device reliability deteriorate as Ti content increases because Ti-induced defects at and near the interface increase with Ti content increasing. Of the Ti/La2O3 ratios in the examined range, the largest Ti/La2O3 ratio is 31.5%, which results in the highest k value of 29.4, the largest gate-leakage current of 9.710-2 Acm-2 at Vg=1 V, the highest interface-sate density of 4.51012 eV-1cm-2 and the worst device reliability, while the La2O3 film without Ti incorporation exhibits the lowest k value of 11.7, the smallest gate-leakage current of 2.510-3 Acm-2 at Vg=1 V, the lowest interface-sate density of 3.31011 eV-1cm-2 and the best device reliability. As far as the trade-off among the electrical properties is concerned, 18.4% is the most suitable Ti/La2O3 ratio, which leads to a higher k value of 22.7, lower interface-sate density of 5.51011 eV-1cm-2, an acceptable gate-leakage current of 7.110-3 Acm-2 at Vg=1 V, and a better device reliability. In view of the fact mentioned above, excellent electrical properties could be obtained by setting Ti content to be an optimal value. Therefore, the optimization of Ti content is critical for LaTi-based oxide Ge MOS device preparation.

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Novel Sn-assisted nitridation of Ge/HfO₂ interface and improved electrical properties of the MOS capacitor

Cited by 3 publications

References 21 publications

Investigation of band alignment between InAlAs and atomic-layer-deposited HfO₂/Al₂O₃ by X-ray photoelectron spectroscopy

Investigation of band alignment between InAlAs and atomic-layer-deposited HfO₂/Al₂O₃ by X-ray photoelectron spectroscopy

Interfacial and electrical characterization of HfO₂/Al₂O₃/InAlAs structures

Electrical properties of LaTiO high-k gate dielectric Ge MOS Capacitor and Ti content optimization

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Novel Sn-assisted nitridation of Ge/HfO2 interface and improved electrical properties of the MOS capacitor

Cited by 3 publications

References 21 publications

Investigation of band alignment between InAlAs and atomic-layer-deposited HfO2/Al2O3 by X-ray photoelectron spectroscopy

Investigation of band alignment between InAlAs and atomic-layer-deposited HfO2/Al2O3 by X-ray photoelectron spectroscopy

Interfacial and electrical characterization of HfO2/Al2O3/InAlAs structures

Electrical properties of LaTiO high-k gate dielectric Ge MOS Capacitor and Ti content optimization

Contact Info

Product

Resources

About

Novel Sn-assisted nitridation of Ge/HfO₂ interface and improved electrical properties of the MOS capacitor

Investigation of band alignment between InAlAs and atomic-layer-deposited HfO₂/Al₂O₃ by X-ray photoelectron spectroscopy

Investigation of band alignment between InAlAs and atomic-layer-deposited HfO₂/Al₂O₃ by X-ray photoelectron spectroscopy

Interfacial and electrical characterization of HfO₂/Al₂O₃/InAlAs structures