Novel synthesis of interconnected nanocubic PbS thin films by facile aqueous chemical route

Khot, Kishorkumar V.; Mali, Sawanta S.; Pawar, Nita B.; Mane, Rahul M.; Kondalkar, Vijay V.; Ghanwat, Vishvanath B.; Patil, P. S.; Hong, Chang Kook; Kim, Jihun; Heo, Jaeyeong; Bhosale, Popatrao N.

doi:10.1007/s10854-014-2087-8

Cited by 40 publications

(25 citation statements)

References 24 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Fig. 1(b) shows a direct band energy plot and the PbS thin film shows 1.40 eV band gap energy value, which is in good accordance with other reported values in literature [6,7]. The crystal structure of the synthesized thin film was confirmed by using XRD study.…”

Section: Resultssupporting

confidence: 86%

Synthesis and characterization of highly ordered nanosized PbS thin films: modified silar

Kishorkumar¹,

Vishvanth²,

Pallavi³

et al. 2016

Nanosystems: Phys. Chem. Math.

View full text Add to dashboard Cite

In the current status, we have successfully synthesized lead sulfide (PbS) thin films using a modified successive ionic layer absorption and reaction (SILAR) method. The synthesized film was characterized using UV-Vis-NIR spectrophotometer, X-ray diffraction (XRD) and field emission scanning electron microscopy (FESEM) techniques for optical, structural and morphological properties. Opto-structural study demonstrates that synthesized thin film has a pure crystal structure. The surface morphology study indicates a nanospherical surface morphology without pinhole on the substrate surfaces. Overall study clearly demonstrates that the synthesized PbS thin film by SILAR method have great potential for sensitization of oxide microstructure.

show abstract

Section: Resultssupporting

confidence: 86%

Synthesis and characterization of highly ordered nanosized PbS thin films: modified silar

Kishorkumar¹,

Vishvanth²,

Pallavi³

et al. 2016

Nanosystems: Phys. Chem. Math.

View full text Add to dashboard Cite

show abstract

“…Figure 5e shows the high resolution core level XPS spectrum of S2p at 160.10 eV binding energy. The presence of well resolved distinct peaks for Pb and S elements confirms the PbS chemistry [5,17,22]. The overall XPS study confirms that Pb 2?…”

Section: Resultssupporting

confidence: 69%

“…However, lead chalcogenide (i.e. PbS) is achieved large researchers interest due to their unique properties such as, high absorption coefficient [17], long exciton lifetime, band gap tunability through quantum confinement [18,19]. Various PbS thin films were synthesized using solvothermal [20], cyclic microwave synthesis [21], SILAR [22] and colloidal synthesis route [23], etc.…”

Section: Introductionmentioning

confidence: 99%

Synthesis, characterization and photoelectrochemical properties of PbS sensitized vertically aligned ZnO nanorods: modified aqueous route

Khot

Mali

Mane

et al. 2015

J Mater Sci: Mater Electron

Self Cite

View full text Add to dashboard Cite

In the present investigation, cost-effective, simple and the modified aqueous chemical route was employed for development of PbS/ZnO heterogeneous thin films on the soda lime and fluorine doped tin oxide (FTO) glass substrates. The synthesized thin films were further characterized by UV-Vis spectrophotometer, X-ray diffraction (XRD), field emission scanning electron microscopy (FESEM) and X-ray photoelectron microscopy (XPS) for their optical, structural, morphological and compositional study. An optical absorption study indicated a direct allowed type of transition. The XRD patterns confirmed that, films were of well crystalline nature. FESEM micrographs illustrated that bare ZnO thin film has been well aligned vertically grown hexagonal nanorods having 3.3 lm length and *100 nm diameters. PbS deposited by using successive ionic layer adsorption and reaction method formed compact interlinked smaller sized nanospheres, which can be beneficial for effective sensitization of microstructures. An XPS study showed synthesis of well composed thin films. PEC study highlighted that PbS/ZnO thin films open a new way for effective light harvesting.

show abstract

“…For photovoltaic applications the potential material should possess an appropriate band gap (between 1 and 1.6 eV), a high absorption coefficient, and low electrical resistivity. Photovoltaic materials include different binary, ternary, and quaternary compounds [e.g., CdTe, PbS, CuInSe 2 , MoBi 2 Se 5 , Cu(In,Ga)Se 2 , Cu 2 ZnSnS 4 ] with their band gap defined by their composition [1][2][3][4]. Different materials are used as window layer including CdS [5,6], Cd(SSe) [7], and ZnS [8].…”

Section: Introductionmentioning

confidence: 99%

Physical properties of chalcogenide Sn–Bi–S graded thin films annealed in argon

2015

View full text Add to dashboard Cite

The development of cost-effective and nontoxic thin film materials is vital for fabrication of solar cells. We are presenting a combinatorial synthesis approach (CSA) for the deposition of chalcogenide Sn-Bi-S graded thin films by thermal evaporation. Post-deposition thermal annealing in the temperature range of 200-500°C in an argon atmosphere has been carried out for the Sn-Bi-S thin films. The effect of annealing treatment and initial composition on the structural properties of the Sn-Bi-S graded thin films was studied by using energy-dispersive X-ray spectroscopy, X-ray diffraction (XRD), and Raman spectroscopy. XRD measurements showed that the thin films were grown in polycrystalline structure. Different microstructural parameters such as crystallite size, dislocation density, and microstrain were estimated after postdeposition thermal treatment and found annealing temperature dependent. From the transmission spectra the estimated optical band gap energy values were found in the range 1.27-1.43 eV for the (Sn/Bi) molar ratio of 2.18-0.67 in a typical sample annealed at 400°C. Photoconductivity response was determined for incident light of wavelength 300-1100 nm and was observed to be annealing temperature and Sn/Bi molar ratio dependent. Photoconductivity was also noted to depend upon the Sn/Bi molar ratio with Sn-rich samples giving the strongest response. Sn-rich compositions also showed p-type conductivity over the temperature range of 350-400°C. These findings show that the CSA has potential for the screening of high-quality Sn-Bi-S thin films.

show abstract

Novel synthesis of interconnected nanocubic PbS thin films by facile aqueous chemical route

Cited by 40 publications

References 24 publications

Synthesis and characterization of highly ordered nanosized PbS thin films: modified silar

Synthesis and characterization of highly ordered nanosized PbS thin films: modified silar

Synthesis, characterization and photoelectrochemical properties of PbS sensitized vertically aligned ZnO nanorods: modified aqueous route

Physical properties of chalcogenide Sn–Bi–S graded thin films annealed in argon

Contact Info

Product

Resources

About