Novel Vertical Channel-All-Around (CAA) In-Ga-Zn-O FET for 2T0C-DRAM With High Density Beyond 4F<sup>2</sup> by Monolithic Stacking

Duan, Xinlv; Huang, Kailiang; Feng, Junxiao; Niu, Jiebin; Qin, Haibo; Yin, Shihui; Jiao, Guangfan; Leonelli, Daniele; Zhao, Xiaoyan; Wang, Zhaogui; Jing, Weiliang; Wang, Zhengbo; Wu, Ying; Xu, Jeffrey; Chen, Qian; Chuai, Xichen; Lu, Congyan; Wang, Wenwu; Yang, Guanhua; Geng, Di; Li, Ling; Liu, Ming

doi:10.1109/ted.2022.3154693

Cited by 69 publications

(34 citation statements)

References 22 publications

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“…Furthermore, advantages such as moderate field-effect mobility (μ FE ), low off-current down to 10 –24 A/μm, wide band gap of ∼3.2 eV, and its low-temperature processing capability (∼400 °C) makes O/S a promising candidate for back-end-of-line (BEOL) compatible transistors for logic, memory, and monolithic 3D integrated devices. For these reasons, O/S composition systems such as IGZO, − indium gallium oxide (IGO), − In 2 O 3 , − indium tin oxide (ITO), , etc., based on the ALD technique, have been studied recently, including the examination of suitability as a channel layer for several O/S substances. However, less is known regarding the design or feasibility of short-channel (<submicrometer scale) O/S TFTs on the basis of the following natural length (λ): , λ = t b t ox ε b ε ox where λ is the natural length that determines the transistor size, t b and t ox are the thicknesses of the body channel and GI layer, respectively, and ε b and ε ox are the dielectric constants of the body channel and gate insulator (GI) layer, respectively.…”

Section: Introductionmentioning

confidence: 99%

High-Performance Thin-Film Transistor with Atomic Layer Deposition (ALD)-Derived Indium–Gallium Oxide Channel for Back-End-of-Line Compatible Transistor Applications: Cation Combinatorial Approach

Hur

Kim

Yoon

et al. 2022

ACS Appl. Mater. Interfaces

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In this paper, the feasibility of an indium−gallium oxide (In 2(1-x) Ga 2x O y ) film through combinatorial atomic layer deposition (ALD) as an alternative channel material for back-endof-line (BEOL) compatible transistor applications is studied. The microstructure of random polycrystalline In 2 O y with a bixbyite structure was converted to the amorphous phase of In 2(1−x) Ga 2x O y film under thermal annealing at 400 °C when the fraction of Ga is ≥29 at. %. In contrast, the enhancement in the orientation of the (222) face and subsequent grain size was observed for the In 1.60 Ga 0.40 O y film with the intermediate Ga fraction of 20 at. %. The suitability as a channel layer was tested on the 10-nm-thick HfO 2 gate oxide where the natural length was designed to meet the requirement of short channel devices with a smaller gate length (<100 nm). The In 1.60 Ga 0.40 O y thin-film transistors (TFTs) exhibited the high field-effect mobility (μ FE ) of 71.27 ± 0.98 cm 2 /(V s), low subthreshold gate swing (SS) of 74.4 mV/decade, threshold voltage (V TH ) of −0.3 V, and I ON/OFF ratio of >10 8 , which would be applicable to the logic devices such as peripheral circuit of heterogeneous DRAM. The in-depth origin for this promising performance was discussed in detail, based on physical, optical, and chemical analysis.

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Section: Introductionmentioning

confidence: 99%

High-Performance Thin-Film Transistor with Atomic Layer Deposition (ALD)-Derived Indium–Gallium Oxide Channel for Back-End-of-Line Compatible Transistor Applications: Cation Combinatorial Approach

Hur

Kim

Yoon

et al. 2022

ACS Appl. Mater. Interfaces

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“…[6] 큰 에너지 밴드 갭으로부터 기인된 low offcurrent 특성을 활용해 저전력 LTPO 디스플레이에 적 용하고 있음은 물론, 최근에는 저전력 DRAM용 트랜지 스터 채널막에도 도입을 검토하고 있는 단계이다. [7][8][9] 이처럼 짧은 시간 내에 눈부신 발전을 이루어 실제 산 업에 실제 응용되고 있는 n-type 산화물 반도체에 비해 다. [10] 이러한 내재적 문제가 극복될 수 있는 p-type 산 화물의 탐색과 실제 구현을 위한 연구가 수행되고 있 다.…”

Section: 서론unclassified

Recent progress of the p-type oxide thin films for transistor applications: Nickel oxide, Tin oxide, and Copper oxide

Choe¹,

Jeon²,

Hwang³

et al. 2023

Ceramist

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Over the past decade, many research groups have been striving to develop high-performance p-type switching oxide materials for implementing complementary metal–oxide–semiconductor (CMOS) thin film devices. However, realizing p-type oxide thin film transistors (TFTs) whose electrical properties are comparable to n-type oxide TFTs has been challenging. This is because of inherent characteristics of p-type oxide materials such as the high formation energy of native acceptors and high hole effective mass caused by localized hole transport path. Developing a p-type oxide with a delocalized hole transport pathway and low hole formation energy is crucial for the production of CMOS circuits utilizing oxide thin films. NiO, SnO, and CuO<sub>x</sub> are being actively studied as candidate materials that satisfy these requirements. This review discusses the latest advances in the synthesis method of p-type binary oxide thin films and the approach for electrical performance enhancement.

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“…Sputter-derived a-IGZO thin film transistors (TFTs) have excellent electrical properties, like relatively high field-effect mobility (μ FE ), steep subthreshold swing (SS), and extremely low leakage current. Since this was first demonstrated by Hosono et al, a-IGZO TFTs attracted worldwide attention, not only for display backplane applications but also for other applications in semiconductor fields. − However, compared to display panels, the semiconductor industry requires excellent step coverage and conformality at a relatively thin thickness for high-density devices, such as field-effect transistors, gate-all-around, and channel-all-around. − Because the conventional physical vapor deposition, sol–gel, and chemical vapor deposition methods for the active layer and gate insulator (GI) deposition of a-IGZO TFTs do not meet these requirements, an advanced technique called atomic layer deposition (ALD) is becoming increasingly important in the semiconductor industry. − …”

Section: Introductionmentioning

confidence: 99%

Thermally Activated Defect Engineering for Highly Stable and Uniform ALD-Amorphous IGZO TFTs with High-Temperature Compatibility

Kim

Lee

et al. 2023

ACS Appl. Mater. Interfaces

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Highly stable IGZO thin-film transistors derived from atomic layer deposition are crucial for the semiconductor industry. However, unavoidable defect generation during high-temperature annealing results in abnormal positive bias temperature stress (PBTS). Herein, we propose a defect engineering method by controlling the gate insulator (GI) deposition temperature. Applying a GI deposition temperature of 400 °C to the In0.52Ga0.18Zn0.30O active layer effectively suppresses defects even after 600 °C annealing, preserving the amorphous phase of IGZO. The device exhibits a threshold voltage (V TH) of 0.05 V, a field-effect mobility of 27.6 cm2/Vs, a subthreshold swing of 61 mV/decade, and a hysteresis voltage of 0.01 V, demonstrating highly reliable PBTS and negative bias temperature stress. A power-law fit of the PBTS stability under 2 MV/cm of gate field stress and 120 °C of temperature stress predicts a V TH shift of −0.01 V after 10 years. Moreover, the proposed method ensures reliable uniformity over a large 4 in. area.

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Novel Vertical Channel-All-Around (CAA) In-Ga-Zn-O FET for 2T0C-DRAM With High Density Beyond 4F² by Monolithic Stacking

Cited by 69 publications

References 22 publications

High-Performance Thin-Film Transistor with Atomic Layer Deposition (ALD)-Derived Indium–Gallium Oxide Channel for Back-End-of-Line Compatible Transistor Applications: Cation Combinatorial Approach

High-Performance Thin-Film Transistor with Atomic Layer Deposition (ALD)-Derived Indium–Gallium Oxide Channel for Back-End-of-Line Compatible Transistor Applications: Cation Combinatorial Approach

Recent progress of the p-type oxide thin films for transistor applications: Nickel oxide, Tin oxide, and Copper oxide

Thermally Activated Defect Engineering for Highly Stable and Uniform ALD-Amorphous IGZO TFTs with High-Temperature Compatibility

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Novel Vertical Channel-All-Around (CAA) In-Ga-Zn-O FET for 2T0C-DRAM With High Density Beyond 4F2 by Monolithic Stacking

Cited by 69 publications

References 22 publications

High-Performance Thin-Film Transistor with Atomic Layer Deposition (ALD)-Derived Indium–Gallium Oxide Channel for Back-End-of-Line Compatible Transistor Applications: Cation Combinatorial Approach

High-Performance Thin-Film Transistor with Atomic Layer Deposition (ALD)-Derived Indium–Gallium Oxide Channel for Back-End-of-Line Compatible Transistor Applications: Cation Combinatorial Approach

Recent progress of the p-type oxide thin films for transistor applications: Nickel oxide, Tin oxide, and Copper oxide

Thermally Activated Defect Engineering for Highly Stable and Uniform ALD-Amorphous IGZO TFTs with High-Temperature Compatibility

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Product

Resources

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Novel Vertical Channel-All-Around (CAA) In-Ga-Zn-O FET for 2T0C-DRAM With High Density Beyond 4F² by Monolithic Stacking