Novolak resins and the microelectronic revolution

Wanat, Stanley F.

doi:10.1117/1.2968268

Cited by 6 publications

(4 citation statements)

References 32 publications

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“…Furthermore, only one ortho connection is possible because a transformation of the o,p′-CH 2 -to o,o′-CH 2 -in phenolic resins takes place only at high temperatures under acidic conditions via quinone-methide intermediates. 25 The anisolic resins (meta-and para-methoxy-substituted) show signals for the methylene (C-5), methylol (B) and methoxy group (C-1) between 29-42, 58-63 and 53-57 ppm, respectively (Fig. 5c).…”

Section: Molecular Structure Investigations Of the Resinsmentioning

confidence: 99%

Resin and carbon foam production by cationic step-growth polymerization of organic carbonates

et al. 2017

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Section: Molecular Structure Investigations Of the Resinsmentioning

confidence: 99%

Resin and carbon foam production by cationic step-growth polymerization of organic carbonates

et al. 2017

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“…Phenolic resins are prepared by the condensation reaction of phenols and formaldehyde. The products obtained with this strategy usually associate with some embarrassed problems, such as relative wide molecular weight distribution of phenolic resins, existence of a small amount of monomeric phenols and crosslinked products in the final mixture [4][5][6] . Another key problem is that the reproducibility is poor so that it is difficult to maintain the stable properties of the products.…”

Section: Introductionmentioning

confidence: 99%

Novel one-component positive-tone chemically amplified i-line molecular glass photoresist based on tannic acid

Wei

Wang

2015

Chem. Res. Chin. Univ.

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Molecular glass resist has been considered as one of the best choices for a new generation of lithography. In this work, a new type of photoactive compound was obtained by the esterification of tannic acid with 2-diazo-1-naphthoquinone-4-sulfonyl chloride(2,1,4-DNQ-Cl) and ditertbutyl dicarbonate. The new obtained compound possessed both a photosensitive group of diazonaphthoquinone sulfonate(2,1,4-DNQ) and a group of acidolytic protection. Upon the irradiation of the compound under 365 nm light, the former group was photolyzed and converted into indene carboxylic acid along with a small amount of sulfonic acid, which could lead to the deprotection of the latter group. As a result, a novel i-line molecular glass photoresist was formed with the chemical modification of tannic acid. The experimental results show that the modificated compound had a fair solubility in many organic solvents. The lithographic performance of the resist was evaluated on an i-line exposure system with high photosensitivity and resolution as well.

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“…A number of excellent reviews have been published on nonchemically amplified g-/i-line photoresists and chemically amplified deep-ultraviolet (DUV) (e.g., 248, 193, and 157 nm) photoresists. , Previous wavelength reductions have required significant changes in photoresist technology to accommodate the transparency and sensitivity requirements imposed by the new illumination wavelength and source power, respectively . For example, the diazonaphthoquinone (DNQ)/novolac resists used in g-/i-line lithography were replaced by resists based on poly(hydroxystyrene), which are more transparent at 248 nm. , In addition, photoresists such as g-/i-line resists that operate via a dissolution inhibition mechanism lacked sufficient photospeed to maintain high wafer throughput given the lower power output of mercury lamp sources in the deep UV. Although high-intensity excimer laser sources were developed for 248 nm lithography, extensive line narrowing reduces the available power significantly and, therefore, these new sources did not dispense with the need for higher sensitivity resists .…”

Section: Introductionmentioning

confidence: 99%