Nucleation and growth of diamond in a microwave plasma on substrate pretreated with non-oxide ceramic particles

Maeda, Hideaki; Masuda, S.; Kusakabe, Katsuki; Morooka, Shigeharu

doi:10.1016/0022-0248(92)90162-c

Cited by 26 publications

(5 citation statements)

References 12 publications

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“…Abrasives used for scratching pretreatment include diamond, oxides, silicides, nitrides, carbides and borides. The effect of the abrasives on nucleation enhancement increases in the following order: silicides < SiO 2 < nitrides < ZrO 2 < carbides < borides < Al 2 O 3 < cBN < diamond [110,111]. As shown in Figure 5 [39], nucleation density decreases with increasing particle size of diamond abrasive paste in the polishing pretreatment ( Figure 5(a)), but increases with increasing particle size in the ultrasonic scratching pretreatment ( Figure 5(b)).…”

Section: Surface Pretreatment Methods and Nucleation Enhancement Mechmentioning

confidence: 96%

Studies on nucleation process in diamond CVD: an overview of recent developments

Liu

Dandy

1995

Diamond and Related Materials

243

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This paper presents an updated and systematic overview of the recent development in studies on nucleation process in diamond CVD. The nucleation mechanisms are discussed, and the nucleation enhancement methods developed to date are summarized. The effects of surface conditions and deposition parameters on the surface nucleation are described. Finally, a brief description of theoretical and modeling studies on the surface nucleation is given.

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Section: Surface Pretreatment Methods and Nucleation Enhancement Mechmentioning

confidence: 96%

Studies on nucleation process in diamond CVD: an overview of recent developments

Liu

Dandy

1995

Diamond and Related Materials

243

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“…The effectiveness of abrasion on the nucleation followed the order, silicides , SiO 2 , nitrides , ZrO 2 , carbides , borides , Al 2 O 3 , c-BN , diamond. 70 Scratching or abrasion of the Si substrate surface with diamond grit enhanced the nucleation density by roughly three orders of magnitude compared with nonscratched Si (up to 10 7 cm 22 ). The grit size of the diamond powder used for scratching also affected the nucleation density; a 0 .…”

Section: Mechanical Abrasionmentioning

confidence: 97%

A review of nucleation, growth and low temperature synthesis of diamond thin films

Das¹,

Singh²

2007

International Materials Reviews

149

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Diamond thin films have outstanding optical, electrical, mechanical and thermal properties, which make these attractive for applications in a variety of current and future systems. In particular, the wide band gap, optical transparency and unusually high thermal conductivity of diamond thin films make them an ideal semiconductor for applications in current and future electronics. However, synthesis of diamond thin films with adequate quality remains a challenging task. Synthesis of diamond at low temperatures is even more challenging because of the difficulties in the nucleation and growth steps involved in diamond thin film deposition on a variety of substrates. Among the several deposition techniques for synthesising diamond films, plasma enhanced chemical vapour deposition is the most promising technique because of its potential for low temperature synthesis. Consequently, the first part of this paper reviews the current state of the nucleation and growth of diamond during chemical vapour deposition. A uniform and high nucleation density is a prerequisite for getting a good quality diamond film with significant growth rate. Also, since the process conditions for nucleation and growth steps are different, attempts are made in this review to identify the important parameters responsible for enhancing the nucleation and growth rates of diamond film. Describing the indispensable need for low temperature growth of diamond film, the second part of the paper reviews the research on the growth of diamond thin films at low temperatures. In spite of the slower kinetics at lower deposition temperatures, an attempt is made to identify the key processing conditions, which enhance the low temperature growth process. In addition, the mechanisms of diamond nucleation and growth are discussed based on the observations from in situ characterisation techniques such as Fourier transform infrared reflection absorption spectroscopy, real time spectroscopic ellipsometry and molecular beam mass spectroscopy.

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“…Scratching substrate surface with an abrasive powder has been the most commonly used method. Diamond nucleation can be enhanced by scratching the substrate surface with diamond [ 39 ], SiC [ 40 ], cubic-BN [ 41 ], Cu or stainless steel [ 42 ], ZrB 2 [ 43 ], Al 2 O 3 [ 44 ], etc. ; abrasive powders among which diamond powder has been the most effective one.…”

Section: Diamond Nucleation and Growthmentioning

confidence: 99%

“…In addition, scratching changes the surface morphology. It creates edges, steps, dislocations, and other surface defective sites which are chemically active; diamond-forming gas species show a great affinity to get adsorbed on these sites [ 43 , 44 , 49 , 50 ].…”

Section: Diamond Nucleation and Growthmentioning

confidence: 99%

Review of advances in diamond thin film synthesis

Srikanth

2011

Proceedings of the Institution of Mechanical Engineers, Part C:

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From time immemorial, diamond attracted a special attention not only as a precious gemstone but also as an application material due to its unique and unsurpassed properties. Interest in diamond thin film research has enormously increased owing to the fact that most of the diamond properties could be utilized for various applications only when it is in the form of a thin film. At present, diamond thin films are able to serve in applications such as electro-mechanical, electro-chemical, bio-medical, bio-sensing, optical, electronic, and machining. Chemical vapour deposition (CVD) is the standalone technique used for diamond thin film synthesis. The mechanism of which typically involves addition of one carbon atom at a time from carbon containing activated gas phase to an initial template resulting in sp3 carbon atom network (diamond). Depending on the synthesis conditions, diamond thin film can constitute epitaxial, oriented, and polycrystalline (micron- and nano-sized) diamond grains. This article reviews important advances that have taken place in diamond thin film synthesis.

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Nucleation and growth of diamond in a microwave plasma on substrate pretreated with non-oxide ceramic particles

Cited by 26 publications

References 12 publications

Studies on nucleation process in diamond CVD: an overview of recent developments

Studies on nucleation process in diamond CVD: an overview of recent developments

A review of nucleation, growth and low temperature synthesis of diamond thin films

Review of advances in diamond thin film synthesis

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