Nucleation and growth of Ge on Si(111) in solid phase epitaxy

Suzumura, Isao; Okada, Masahisa; Muto, Akiyoshi; Torige, Yuji; Ikeda, Hiroya; Sakai, Akira; Zaima, Shigeaki; Yasuda, Yukio

doi:10.1016/s0040-6090(00)00848-8

Cited by 19 publications

(11 citation statements)

References 11 publications

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“…10 SPE of pure Ge on Si͑111͒ substrates has been reported for layers of a few nanometers thick deposited in ultrahigh vacuum. 11 However this resulted in a non-planar surface. 11 The growth process of SPE of Ge on Si therefore seems similar to all other epitaxial growth techniques.…”

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confidence: 99%

Solid phase epitaxy of amorphous Ge on Si in N2 atmosphere

Lieten

Degroote

Leys

et al. 2009

Applied Physics Letters

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We demonstrate a straightforward and economical way to obtain smooth germanium layers of high quality on silicon. Thin amorphous germanium layers deposited by plasma enhanced chemical vapor deposition on Si(111) substrates are transformed into single crystalline and smooth layers by solid phase epitaxy in N2 atmosphere. The crystal orientation of the substrate has a clear influence on the crystal quality. This is most likely due to a different growth mode, namely, layer-by-layer for Si(111) and three-dimensional growth for Si(001). The amorphous germanium layer can roughen during annealing due to mobile atoms on the surface. This can be effectively suppressed by annealing in N2 ambient. Electrical measurements show high charge mobility.

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confidence: 99%

Solid phase epitaxy of amorphous Ge on Si in N2 atmosphere

Lieten

Degroote

Leys

et al. 2009

Applied Physics Letters

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“…[1][2][3][4][5][6][7][8][9][10] While Ge nanostructures have been widely studied on Si͑001͒ surfaces, 1-3 there has been growing interest for Ge nanostructures on a Si͑111͒-7 ϫ 7 reconstructed surface with dimer rows, adatoms, and stacking fault ͑DAS͒ explained by the DAS model. 11 Many reports of Ge growth on Si͑111͒-7 ϫ 7 surfaces presented thermodynamic fluctuations on morphology of nanostructures grown at different temperatures and fluxes; [6][7][8][9][10][12][13][14][15][16][17][18][19] the morphology delicately changes with growth conditions.…”

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Low-flux elucidation of initial growth of Ge clusters deposited onSi(111)−7×7observed by scanning tunneling microscopy

2009

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“…Instead, we used solid phase epitaxy (SPE) because it yields a higher domain density by increasing the nucleation density for domain growth [9]. First, Si(111)7×7 was prepared using standard direct heating methods.…”

Section: Boundary Symmetry Propertiesmentioning

confidence: 99%

Domain boundaries of the Si(111)‐Ge5×5 reconstruction

Mark

McLean

2010

Phys. Status Solidi (c)

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The boundaries that form between domains of the 5×5 reconstruction of Si(111)‐Ge are examined. A notation for indexing the boundaries is developed, and their symmetry properties are discussed. A preparation procedure that enhances the density of such boundaries while en‐couraging their uniform growth is described. The notation is illustrated using a selection of observed examples (© 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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Nucleation and growth of Ge on Si(111) in solid phase epitaxy

Cited by 19 publications

References 11 publications

Solid phase epitaxy of amorphous Ge on Si in N2 atmosphere

Solid phase epitaxy of amorphous Ge on Si in N2 atmosphere

Low-flux elucidation of initial growth of Ge clusters deposited onSi(111)−7×7observed by scanning tunneling microscopy

Domain boundaries of the Si(111)‐Ge5×5 reconstruction

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