In this study, we present a polymer-assisted solution (PAS) process to prepare TiO 2 electrolyte layers for resistive-switching random access memory (ReRAM). The PAS process utilizes the stability of metal-polymer complexes in the coating solution to form uniform and dense films. In addition, the viscosity of the PAS coating solution can easily be adapted for any currently used coating technique. The electrochemical-metallization-based (ECM-based) ReRAM devices were prepared by spin-coating the PAS coating solution on an indium tin oxide (ITO) glass substrate that is used as the bottom electrode. Cu was deposited on the PAS-TiO 2 electrolyte as an electrochemically active metal electrode used as the top electrode. The ECM-based ReRAM with the PAS-TiO 2 electrolyte layer demonstrated bipolar resistive-switching behavior with a memory window wider than 13, cycle endurance over 500 cycles, and retention time longer than 10 4 s. Analysis of the conduction mechanism in high and low resistive states indicates that the resistive switching is attributed to the formation and rupture of Cu conducting filaments (CFs) in the PAS-TiO 2 electrolyte layer. New nonvolatile memory devices with various material characteristics based on ferroelectric polarization, magnetic polarization, and material phase change have been investigated to overcome the scalability issue of modern flash memory devices.1-3 However, recent research efforts have focused on resistive-switching random access memory (ReRAM), also known as conductive-bridge random access memory (CBRAM) or electrochemical-metallization-based (ECMbased) ReRAM, due to its outstanding advantages including a simple structure, low switching power consumption, fast switching speed, and capability of both unipolar and bipolar switching modes.4-6 ECMbased ReRAM consists of a solid electrolyte thin film in between two electrodes, an electrochemically active metal (EAM) electrode such as Ag or Cu and an electrochemically inert metal (EIM) electrode such as Pt, Au, or W. The EAM, biased with a sufficiently positive-polarity voltage with respect to the counter electrode (EIM), is electrochemically dissolved and migrates through the solid electrolyte toward the EIM electrode. Consequently, a conducting bridge forms between the two electrodes, which is also known as a conducting filament (CF). The resistive switching in the ECM-based ReRAM relies on the formation (SET) and rupture (RESET) of the CFs in the solid electrolyte, which depend on the polarity of the applied voltage. 7,8 Various solid electrolyte materials such as perovskites, chalcogenides and metal oxides have been explored for the fabrication of ReRAM.9-21 Most solid electrolyte films have been deposited using vacuum based processes such as thermal oxidation, atomic layer deposition, pulsed laser deposition, sputtering, and thermal evaporation. 15,19,[22][23][24] There are also other efforts devoted to growing metal oxide films as the solid electrolyte layers using chemical solution deposition such as sol-gel process. 25,26 H...