Nucléation et croissance de films YBa2Cu3O7 - δ déposés par ablation laser sur substrat de MgO(001)

Keller, D.; Gervais, Adrian; Chambonnet, D.; Belouet, C.; Audry, C.

doi:10.1051/jp3:1995115

Cited by 5 publications

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“…For instance, Fig. 3a reproduces the results of Keller et al [10], showing a temperature window about 40°C wide giving almost pure c ┴0 orientation. At higher temperature c145 orientation starts to appear.…”

Section: Effect Of Deposition Parameters On Film Orientationsupporting

confidence: 83%

Growth of Laser Ablated YBa₂Cu₃O₇Thin Films Epitaxied on (100)MgO: Influence of In-Plane Misorientations on Low and High Frequency Properties

1997

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Tle graphoepitaxial growth of c-axis YΒa2Cu3O7 laser ablated thin films on (100)MgO induces a competition between two main in-plane orientations due to the large lattice mismatch: (100) YΒa2Cu3O7 || (100) MgO, c10 notation or (I 10) YΒa2 Cu3O7 || (100) MgO, c145 notation. The ratio of c┴45 /c┴0 in-plane orientations (η), measured by X-ray diffraction φ scans, is ranging from 0.2% to 49.7% for the films reported here. Their crystalline qualities were compared on the basis of rocking curves (Δθ), electron channelinng patterns and reflection high energy electron diffraction diagrams. The coexistence of c┴ 0 a n d G 1 4 5 d o m a i n s c r e a t e s h i g h a n g l e g r a i n b o u n d a r i e s . N o degradation of Τc , residual resistance ratio (RRR) or ΔTc is observed when η increases. In contrast, a strong correlation between microwave losses characterized by surface resistance (Rs at 10 GHz and 77 K), inductive losses S(χ") (surface of the χ" peak obtained in a.c. susccptibility at 119 Hz) and η was clearly evidenced. A minimum of losses was found for η between 3 and 6% suggesting the necessity of a low quantity of high angle grain boundaries for films optimization. Finally, some specific processes carried out recently in order to try to efficiently control η, then Rs are discussed.PACS numbers: 68.55. Jk, 73.25.+i 1. Introduction The control of the growtl of ligl quality epitaxial thin fllms of HTSC materials opens the way to a number of applications, specially in the field of microwave devices. however, working at high frequencies implies additional requirements on the dielectric properties of the substrates and, in this aspect, (100)MgO single crystal is one of the most popular. Unfortnnately, this material presents an important misfit with HTSC, meaning severe limitations in the mechanism of heteroepitaxial growth. In this paper, we will focus on the growth of YΒa2Cu3O7 (YBCO) on (100)MgO using pulsed laser deposition, thc specific defects of such films and their implication on the surface resistance RS wlich is the pertinent parameter for any microwave applications.

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Section: Effect Of Deposition Parameters On Film Orientationsupporting

confidence: 83%

Growth of Laser Ablated YBa₂Cu₃O₇Thin Films Epitaxied on (100)MgO: Influence of In-Plane Misorientations on Low and High Frequency Properties

1997

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“…Il est bien connu en hétéro-épitaxie de structures identiques, présentant un faible désaccord de maille, que les contraintes induites par ce désaccord dans le film sont en partie relaxées au-delà d'une épaisseur critique h c , par l'apparition de dislocations [51]. Dans le cas étudié, cela se traduit par la transition d'une croissance 2D à une croissance 3D sur dislocations vis [52]. L'étude de la structure ci-dessus a montré que h c augmentait considérablement lorsque le désaccord de mailles à l'interface entre YBa 2 Cu307_5 et la couche sous-jacente tendait vers zéro, figure 3, tandis que simultanément la taille des grains croissait [53].…”

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Dépôt de films minces par ablation laser, le potentiel industriel

et al. 1997

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Thin film growth by the pulsed laser assisted deposition technique

Belouet

1996

Applied Surface Science

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Nucléation et croissance de films YBa2Cu3O7 - δ déposés par ablation laser sur substrat de MgO(001)

Cited by 5 publications

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Growth of Laser Ablated YBa₂Cu₃O₇Thin Films Epitaxied on (100)MgO: Influence of In-Plane Misorientations on Low and High Frequency Properties

Growth of Laser Ablated YBa₂Cu₃O₇Thin Films Epitaxied on (100)MgO: Influence of In-Plane Misorientations on Low and High Frequency Properties

Dépôt de films minces par ablation laser, le potentiel industriel

Thin film growth by the pulsed laser assisted deposition technique

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Nucléation et croissance de films YBa2Cu3O7 - δ déposés par ablation laser sur substrat de MgO(001)

Cited by 5 publications

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Growth of Laser Ablated YBa2Cu3O7Thin Films Epitaxied on (100)MgO: Influence of In-Plane Misorientations on Low and High Frequency Properties

Growth of Laser Ablated YBa2Cu3O7Thin Films Epitaxied on (100)MgO: Influence of In-Plane Misorientations on Low and High Frequency Properties

Dépôt de films minces par ablation laser, le potentiel industriel

Thin film growth by the pulsed laser assisted deposition technique

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Growth of Laser Ablated YBa₂Cu₃O₇Thin Films Epitaxied on (100)MgO: Influence of In-Plane Misorientations on Low and High Frequency Properties

Growth of Laser Ablated YBa₂Cu₃O₇Thin Films Epitaxied on (100)MgO: Influence of In-Plane Misorientations on Low and High Frequency Properties