Nucleation of hydrogen-induced platelets in silicon

Abstract

Hydrogen-induced platelet generation in single-crystal silicon was investigated as a function of the Fermi energy. Platelet formation is observed only for Fermi-level positions of E C ϪE F р0.3 eV. With decreasing E C ϪE F the platelet density increases monotonically to 2.45ϫ10 17 cm Ϫ3 . Experiments performed on electrically compensated silicon demonstrate that the formation of hydrogen-induced platelets is solely controlled by the Fermi energy.

Dopant dependence on passivation and reactivation of carrier after hydrogenation

“…The formation of hydrogen molecules and platelets also depends on the types of dopant impurities in Si. 18,19 Furthermore, H multiple trapping centers are formed in heavily H-and B-doped Si. 20,21 Recently, some of them have been assigned to B-H complexes in which multiple H atoms are trapped, and at least one of them directly bonds to the B in Si.…”

Investigation of stress-induced (100) platelet formation and surface exfoliation in plasma hydrogenated Si

“…While the general features of this exfoliation description are commonly accepted, many of the details associated with the various processes leading to platelet nucleation and H 2 molecule trapping are still under discussion. For example, it is well-known that platelets only form on ͕111͖ planes during plasma hydrogenation 4 and exfoliation is not observed. However, when hydrogen is introduced into Si by ion implantation, platelets are primarily observed to form parallel to the substrate surface 5 and exfoliation is observed.…”

Controlled drive-in and precipitation of hydrogen during plasma hydrogenation of silicon using a thin compressively strained SiGe layer

“…3,4 Nevertheless, as the energy of the H ions impacting the surface is low and spread, the platelets are depth-distributed all over the nearsurface region. Moreover, mostly ͕111͖ platelets not parallel to the wafer surface, the most stable defects in absence of stress, 5 are formed during hydrogenation. [3][4][5] As a consequence, plasma hydrogenation alone cannot be used to transfer layers of sufficiently high crystalline quality.…”

“…Moreover, mostly ͕111͖ platelets not parallel to the wafer surface, the most stable defects in absence of stress, 5 are formed during hydrogenation. [3][4][5] As a consequence, plasma hydrogenation alone cannot be used to transfer layers of sufficiently high crystalline quality.…”