Numerical analysis for high-efficiency GaAs solar cells fabricated on Si substrates

Yamaguchi, Masafumi; Amano, C.; Itoh, Yoshio

doi:10.1063/1.343520

Cited by 60 publications

(39 citation statements)

References 6 publications

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“…where τ d is one associated with the dislocation density, derived from solving the one-dimensional continuity equation for the transport of minority carriers to the dislocations by Yamaguchi et al [5,20] as follows:…”

Section: Methodsmentioning

confidence: 99%

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Evaluating the effect of dislocation on the photovoltaic performance of metamorphic tandem solar cells

Zhang

Chen

Wang

et al. 2010

Sci. China Technol. Sci.

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The photovoltaic conversion efficiency for monolithic GaInP/GaInAs/Ge triple-junction cell with various bandgap combination (300 suns, AM1.5d) was theoretically calculated. An impressive improvement on conversion efficiency was observed for a bandgap combination of 1.708, 1.194, and 0.67 eV. A theoretical investigation was carried out on the effect of dislocation on the metamorphic structure's efficiency by regarding dislocation as minority-carrier recombination center. The results showed that only when dislocation density was less than 1.6×10 6 cm −2 , can this metamorphic combination exhibit its efficiency advantage over the fully-matched combination. In addition, we also briefly evaluated the lattice misfit dependence of the dislocation density for a group of metamorphic triple-junction system, and used it as guidance for the choice of the proper cell structure. tandem solar cell, theoretical efficiency, dislocation, buffer layers Citation: Zhang H, Chen N F, Wang Y, et al. Evaluating the effect of dislocation on the photovoltaic performance of metamorphic tandem solar cells. Sci

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Section: Methodsmentioning

confidence: 99%

“…As discussed in refs. [19,20], TD propagates through all layers Table 1 Material parameters used for simulating Ga 1−x In x P, Ga 1−y In y As and Ge subcells, respectively …”

Section: Methodsmentioning

confidence: 99%

Evaluating the effect of dislocation on the photovoltaic performance of metamorphic tandem solar cells

Zhang

Chen

Wang

et al. 2010

Sci. China Technol. Sci.

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“…This suggests that the limiting mechanism for these devices is TDD-based recombination. In support of this idea, many researchers, such as Yamaguchi et al [8], have suggested that better results can only be attained by improving the TDD.…”

Section: Introductionmentioning

confidence: 90%

“…Initial research using this technique at NTT Electrical Communications Lab [7,8] reported that increasing the thickness of a GaAs buffer layer decreased the TDD. These researchers demonstrated a best device that offered a W oc of 0.51 V with a TDD as low as 4:0 Â 10 6 cm À 2 measured via etch-pit density (EPD) and transmission electron microscopy (TEM).…”

Section: Introductionmentioning

confidence: 99%

GaAsP on SiGe/Si material quality improvements with in-situ stress sensor and resulting tandem device performance

Schmieder

Gerger

Diaz³

et al. 2015

Materials Science in Semiconductor Processing

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“…This degradation in lifetime may significantly impede the cell performance [4]- [6]. The effective minority carrier lifetime (τ n or τ p ) in a latticemismatched system varies as a function of TDD (f (τ TDD )) [7], [16] and can be expressed as, where τ°p and τ°n are the minority carrier lifetime for a dislocation free material. The τ TDD is the minority carrier lifetime associated with the recombination at dislocation which can be expressed as,…”

Section: Simulation Modelmentioning

confidence: 99%

Design of metamorphic dual-junction InGaP/GaAs solar cell on Si with efficiency greater than 29% using finite element analysis

Jain

Hudait

2012

2012 38th IEEE Photovoltaic Specialists Conference

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Heterogeneous integration of multijunction III-V solar cells on Si is a promising solution for the widespread commercialization of III-V cells. However, the polar on non-polar epitaxy and 4% lattice-mismatch between GaAs and Si results in formation of defects and dislocations, which can significantly impede the minority carrier lifetime and hence the cell performance. We have investigated the impact of threading dislocation density on the performance of dual-junction (2J) n+/p InGaP/GaAs solar cells on Si. Using our calibrated model, the metamorphic 2J cell on Si was optimized by tailoring the 2J cell design on Si to achieve current-matching between the subcells at a realistic threading dislocation density of 10 6 cm -2 . We present a novel 2J InGaP/GaAs cell design on Si at a threading dislocation density of 10 6 cm -2 which exhibited a theoretical conversion efficiency of greater than 29% at AM1.5G spectrum, indicating a path for viable III-V multijunction cell technology on Si.Index Terms -III-V semiconductor materials, charge carrier lifetime, epitaxial layers, photovoltaic cells, semiconductor device modeling, short circuit currents, silicon.

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Numerical analysis for high-efficiency GaAs solar cells fabricated on Si substrates

Cited by 60 publications

References 6 publications

Evaluating the effect of dislocation on the photovoltaic performance of metamorphic tandem solar cells

Evaluating the effect of dislocation on the photovoltaic performance of metamorphic tandem solar cells

GaAsP on SiGe/Si material quality improvements with in-situ stress sensor and resulting tandem device performance

Design of metamorphic dual-junction InGaP/GaAs solar cell on Si with efficiency greater than 29% using finite element analysis

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