Numerical analysis of capacitance compact models for organic thin-film transistors

Scheinert, S.; Zaki, Tarek; Rödel, Reinhold; Hörselmann, Ingo; Klauk, Hagen; Burghartz, Joachim N.

doi:10.1016/j.orgel.2014.04.013

Cited by 11 publications

(10 citation statements)

References 20 publications

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“…[213] Another vivid field is the conception of compact transistor models. [231][232][233] For transistors, all distinct device regions that can act as capacitances are of central importance. These capacitances inform to which extent and how fast charge carriers are rearranged in the transistors.…”

Section: Consideration Of Spatially Distinct Device Regionsmentioning

confidence: 99%

“…[231,233,235] For the latter reason, such models are conceived and bench-marked in a tight feedback loop with drift-diffusion-based simulations. [231,233] Typical applications comprise the determination of voltage-and frequency-dependent capacitances in transistors [231,233] and small circuits, [235] or time-dependence of charge accumulation. [231] While it appears to be straight-forward to inform the latter transistor models with more detailed drift-diffusion-based simulations, it is not established whether it is possible to rigorously extract a network of building blocks (seen above for OLEDs and transistors) from any drift-diffusion-based simulation.…”

Section: Consideration Of Spatially Distinct Device Regionsmentioning

confidence: 99%

“…Transistor models aiming at compact capacitance models inherently discriminate different device regions, as these models build on the existing physical understanding of charge rearrangements in different parts of the transistor. [ 231,233,235 ] For the latter reason, such models are conceived and bench‐marked in a tight feedback loop with drift‐diffusion‐based simulations. [ 231,233 ] Typical applications comprise the determination of voltage‐ and frequency‐dependent capacitances in transistors [ 231,233 ] and small circuits, [ 235 ] or time‐dependence of charge accumulation.…”

Section: Approaches Inspired By Circuit‐modelingmentioning

confidence: 99%

See 2 more Smart Citations

Simulation of Charge Carriers in Organic Electronic Devices: Methods with their Fundamentals and Applications

Zojer

2021

Advanced Optical Materials

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Device modeling is an established tool to design and optimize organic electronic devices, be them organic light emitting diodes, organic photovoltaic devices, or organic transistors and thin‐film transistors. Further, reliable device simulations form the basis for elaborate experimental characterizations of crucial mechanisms encountered in such devices. The present contribution collects and compares contemporary model approaches to describe charge transport in devices. These approaches comprise kinetic Monte Carlo, the master equation, drift‐diffusion, and equivalent circuit analysis. This overview particularly aims at highlighting the following three aspects for each method: i) The foundation of a method including inherent assumptions and capabilities, ii) how the nature of organic semiconductors enters the model, and iii) how major tuning handles required to control the device operation are accounted for, namely temperature, external field, and provision of mobile carriers. As these approaches form a hierarchy of models suitable for multiscale modeling, this contribution also points out less established or even missing links between the approaches.

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Section: Consideration Of Spatially Distinct Device Regionsmentioning

confidence: 99%

Section: Consideration Of Spatially Distinct Device Regionsmentioning

confidence: 99%

Section: Approaches Inspired By Circuit‐modelingmentioning

confidence: 99%

See 1 more Smart Citation

Simulation of Charge Carriers in Organic Electronic Devices: Methods with their Fundamentals and Applications

Zojer

2021

Advanced Optical Materials

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“…However in OTFTs, a frequency dependency of the capacitances is observed. In [13], it is reported that already in the kilohertz regime the frequency dependency start to play an important role.…”

Section: Differential Amplifiermentioning

confidence: 99%

Charge-Based Compact Modeling of Capacitances in Staggered Multi-Finger OTFTs

Leise

Pruefer

Darbandy

et al. 2020

IEEE J. Electron Devices Soc.

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This journal paper introduces a charge-based approach for the calculation of charges and capacitances in staggered organic thin-film transistors (OTFTs). Based on an already existing DC model, the charges are yielded in an analytical and compact form. A linear charge partitioning scheme is applied to ascribe charges to the drain/source side of the channel. The final equation is only dependent on geometrical parameters and the charge densities at the drain/source end of the channel. Furthermore, the fringing regions in fabricated devices are taken into account. The compact model is implemented in Verilog-A and the capacitances are compared to Sentaurus TCAD simulation results as well as measurement data. Additionally, simulation results for a differential amplifier are compared to measurements. The advantage of this model is its unique formulation covering all operation regimes. INDEX TERMS Capacitance, charge-based model, compact modeling, OTFT.

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“…where A is the area of a circular electrode with 1.1 mm of diameter, q is the elementary charge, ε 0 is the permittivity of vacuum, and ε r is the relative permittivity, here set to 3.0 [14]. Using Eq.…”

Section: Fabrication Of Mis Structure and C-v Measurementmentioning

confidence: 99%

Experimental and Numerical Investigation of Contact Doping Effects in Dinaphthothienothiphene Thin‐Film Transistors

Yamamoto

Noda²,

Wada

et al. 2017

Elect Comm in Japan

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Contact doping effects in p-channel dinaphthothienothiphene (DNTT) thin-film transistors with a bottomgate, top-contact configuration were investigated with both experimental and numerical approach. Characteristic variation in transistor parameters such as the gate threshold voltage and the field-effect mobility for devices with various channel lengths was suppressed by the contact doping with tetrafluorotetracyanoquinodimethane (F 4 TCNQ) as an acceptor dopant. The gate-voltage dependence of contact resistance and channel resistance was also evaluated separately to examine the contact doping effect in detail. In addition, device simulation considering a Schottky barrier at a metal/semiconductor interface successfully reproduced the experimental current-voltage characteristics by using a hole concentration of the active DNTT layer in the order of 10 17 cm −3 , which was estimated by capacitancevoltage measurement for a metal/insulator/semiconductor capacitor structure. This study suggests the importance of establishing both the carrier doping and carrier concentration measurements toward realizing practical applications of organic transistors. C⃝

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Numerical analysis of capacitance compact models for organic thin-film transistors

Cited by 11 publications

References 20 publications

Simulation of Charge Carriers in Organic Electronic Devices: Methods with their Fundamentals and Applications

Simulation of Charge Carriers in Organic Electronic Devices: Methods with their Fundamentals and Applications

Charge-Based Compact Modeling of Capacitances in Staggered Multi-Finger OTFTs

Experimental and Numerical Investigation of Contact Doping Effects in Dinaphthothienothiphene Thin‐Film Transistors

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