Numerical analysis of czts solar cell with in2s3 buffer layer: a study of a czts based thin film solar cell, concerning the effects of several parameters on its electrical performance

Impact on generation and recombination rate in Cu2ZnSnS4 (CZTS) solar cell for Ag2S and In2Se3 buffer layers with CuSbS2 back surface field layer

“…Chemical bath deposition was used to create Cu S bS 2 thin films on a glass substrate. It is a highly doped p‐type material, also, it is an alternative absorber layer material used as a BSF layer in the present work because of its earth‐abundance, low cost, and non‐toxic nature 17,22–25 . Here, In 2 Se 3 and Ag 2 S have been deliberately selected as buffer layers to explore their morphology and structure to accurately represent the results of simulations; CuSbS 2 is taken as the BSF layer.…”

“…It is a highly doped p-type material, also, it is an alternative absorber layer material used as a BSF layer in the present work because of its earth-abundance, low cost, and non-toxic nature. 17,[22][23][24][25] Here, In 2 Se 3 and Ag 2 S have been deliberately selected as buffer layers to explore their morphology and structure to accurately represent the results of simulations; CuSbS 2 is taken as the BSF layer. Basic electronic and optical properties of CuSbS 2 material include an almost ideal direct band gap of 1.37 eV to 1.58 eV and greater broad-spectrum optical absorption (10 5 cm À1 ), a moderate acceptor concentration (10 16 -10 20 cm À3 ), chemically stable phase, and a low melting point (551 C), appear to be approaching p-type material for PV cells.…”

“…Thin film heterojunction SCs' electrical properties can be simulated in both DC and AC. It is possible to model additional types of heterojunction SCs, such as CZTS, even though this tool was designed to emulate CdTe and CIGS SCs 23. …”

Performance Enhancement of CZTS Solar Cell with CuSbS<sub>2</sub> Back Surface Field: A Numerical Simulation Approach

“…A research investigation successfully attained an efficiency of 18.66% with a 2000 nm thick CZTS absorber layer and a 100 nm thick CdS buffer layer [10]. Additionally, a different approach obtained 18.68% efficiency by employing FTO as the window layer, In 2 S 3 as the buffer layer, CZTS as the absorber layer and Mo as back contact [11], while another study on CZTS SC recorded 19.23% efficiency with a ZnO window layer, a 50 nm thick In 2 S 3 buffer layer, and a 1000 nm thick CZTS absorber layer [12]. A photovoltaic device composed of the Al-ZnO/CdS/CZTS/MoO 3 /Au structure achieved a PCE of 22.28% during an in-vestigation into the utilization of MoO 3 as the back-surface field.…”