Numerical analysis of degradation kinetics in CdTe thin films

Gorji, Nima E.; Reggiani, Ugo; Sandrolini, Leonardo

doi:10.1016/j.solener.2015.05.041

Cited by 10 publications

(7 citation statements)

References 33 publications

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“…Under stress conditions, excess charge carriers, n , and p , generate, which cause the formation and increase of defects in the PSC [33] . Since the defect increment affects the behavior and performance of the device, the degradation rate of the device parameters can be modeled by monitoring the defect concentration [33] , [34] , [35] .…”

Section: Theorymentioning

confidence: 99%

where α and β are the defect creation and annihilation rates related to the material parameters, and their values are assigned according to the defect type.…”

Section: Theorymentioning

confidence: 99%

“…By considering a relatively short time profile such that

1

, the annihilation term can be neglected, and the dynamics Eq. (1) can be simplified as [33] :

An increase in the carrier and defect density changes the material characteristics, the generation and recombination rates, and the built-in voltage at the terminal [33] . Hence, as stated in Eq.…”

Section: Theorymentioning

confidence: 99%

“…(2) , there is an interaction between the excess carriers and the defect densities. At the steady-state stress condition and constant generation rate ( G ), we have:

0

where B , μ , E and

are the band to band recombination coefficient, mobility, electric field, and exponent of the carrier recombination, respectively [33] . Three different carrier concentration scenarios can be considered for Eq.…”

Section: Theorymentioning

confidence: 99%

See 3 more Smart Citations

Early thermal aging detection in tin based perovskite solar cell

Manbar

Hosseini²,

Ghanbari³

et al. 2022

Heliyon

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Section: Theorymentioning

confidence: 99%

where α and β are the defect creation and annihilation rates related to the material parameters, and their values are assigned according to the defect type.…”

Section: Theorymentioning

confidence: 99%

“…By considering a relatively short time profile such that

1

, the annihilation term can be neglected, and the dynamics Eq. (1) can be simplified as [33] :

Section: Theorymentioning

confidence: 99%

“…(2) , there is an interaction between the excess carriers and the defect densities. At the steady-state stress condition and constant generation rate ( G ), we have:

0

where B , μ , E and

Section: Theorymentioning

confidence: 99%

See 2 more Smart Citations

Early thermal aging detection in tin based perovskite solar cell

Manbar

Hosseini²,

Ghanbari³

et al. 2022

Heliyon

View full text Add to dashboard Cite

“…[ 16a ] Copyright 2015, Royal Society of Chemistry c) Trap density comparison of common commercial semiconductors and PVSK SCs. Reference: CIGS semiconductors: 1, [ 30 ] 2,3; [ 44 ] polycrystalline Si semiconductors: 1, [ 28b ] 2,3; [ 45 ] CdTe semiconductors: 1,2,3,4, [ 29 ] 5; [ 46 ] MAPbX 3 SCs: 1, [ 13b ] 2,3, [ 27b ] 4, [ 6c ] 5, [ 34a ] 6. [ 26b ]…”

Section: Introductionmentioning

confidence: 99%

Perovskite Single Crystals: Synthesis, Optoelectronic Properties, and Application

Han

et al. 2020

Adv Funct Materials

118

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Recently, lead halide perovskite (PVSK) polycrystalline films have drawn much attention as photoactive material and scored tremendous achievements in solar cells, photodetectors, light‐emitting diodes, and lasers owing to their engrossing optoelectronic properties and facile solution‐processed fabrication. However, large amounts of grain boundaries unfavorably induce ion migration, surface defect, and poor stability, impeding PVSK polycrystalline film‐based optoelectronic devices from practical application. In comparison with the polycrystalline counterparts, PVSK single crystals (SCs) with lower trap density serve as a better platform for not only fundamental research but also device applications. In light of this, the idea of using PVSK single crystals (SCs) to construct the optoelectronic devices is then proposed. Since then, a series of synthesis methods of PVSK SCs have emerged. In this review, recent progress of synthesis method of PVSK SCs is tried to be summarized and their advantages and limitations are analyzed. And then, the optoelectronic properties including carrier dynamic, defects, ion migration, and instability issues in these 3D and 2D PVSK SCs are overviewed and accordingly the proper device configurations of corresponding solar cells, photodetectors, X‐ray, γ‐ray detectors, etc., are proposed. It is believed that this review can provide the guidance for the further development of PVSK SCs and their applications.

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Surface recombination and peltier heat generation in Kesterite thin film solar cells due to defect increment under elevated heat

Hajjiah

2024

Optik

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Numerical analysis of degradation kinetics in CdTe thin films

Cited by 10 publications

References 33 publications

Early thermal aging detection in tin based perovskite solar cell

Early thermal aging detection in tin based perovskite solar cell

Perovskite Single Crystals: Synthesis, Optoelectronic Properties, and Application

Surface recombination and peltier heat generation in Kesterite thin film solar cells due to defect increment under elevated heat

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