Numerical Analysis of MIM-Based Log-Spiral Rectennas for Efficient Infrared Energy Harvesting

Yahyaoui, Ali; Elsharabasy, Ahmed Y.; Yousaf, Jawad; Rmili, Hatem

doi:10.3390/s20247023

Cited by 9 publications

(3 citation statements)

References 40 publications

(141 reference statements)

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“…The optimized figures of merit reported here are comparable to or better than those of previously reported diodes with a single Al 2 O 3 layer [ 21,40–45 ] , as summarized in Table S4 in the Supporting Information. The use of this thickness gradient Al 2 O 3 film has enabled the identification of a slightly larger optimal Al 2 O 3 thickness (6.5 to 7.0 nm) than what we reported previously for Pt/Al 2 O 3 /Al diodes deposited by AP‐CVD (6 nm).…”

Section: Resultssupporting

confidence: 80%

Nanoscale Film Thickness Gradients Printed in Open Air by Spatially Varying Chemical Vapor Deposition

Alshehri

Loke

Nguyễn

et al. 2021

Adv Funct Materials

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Nanoscale films are integral to all modern electronics. To optimize device performance, researchers vary the film thickness by making batches of devices, which is time‐consuming and produces experimental artifacts. Thin films with nanoscale thickness gradients that are rapidly deposited in open air for combinatorial and high‐throughput (CHT) studies are presented. Atmospheric pressure spatial atomic layer deposition reactor heads are used to produce spatially varying chemical vapor deposition rates on the order of angstroms per second. ZnO and Al2O3 films are printed with nm‐scale thickness gradients in as little as 45 s and CHT analysis of a metal‐insulator‐metal diode and perovskite solar cell is performed. By testing 360 Pt/Al2O3/Al diodes with 18 different Al2O3 thicknesses on one wafer, a thicker insulator layer (≈7.0 nm) is identified for optimal diode performance than reported previously. Al2O3 thin film encapsulation is deposited by atmospheric pressure chemical vapor deposition (AP‐CVD) on a perovskite solar cell stack for the first time and a convolutional neural network is developed to analyze the perovskite stability. The rapid nature of AP‐CVD enables thicker films to be deposited at a higher temperature than is practical with conventional methods. The CHT analysis shows enhanced stability for 70 nm encapsulation films.

show abstract

Section: Resultssupporting

confidence: 80%

Nanoscale Film Thickness Gradients Printed in Open Air by Spatially Varying Chemical Vapor Deposition

Alshehri

Loke

Nguyễn

et al. 2021

Adv Funct Materials

View full text Add to dashboard Cite

show abstract

“…The optimized figures of merit reported here are comparable to or better than those of previously reported diodes with a single Al 2 O 3 layer [21,[40][41][42][43][44][45] , as summarized in Table S4 in the Supporting Information. The use of this thickness gradient Al 2 O 3 film has enabled the identification of a slightly larger optimal Al 2 O 3 thickness (6.5 to 7.0 nm) than what we reported previously for Pt/Al 2 O 3 /Al diodes deposited by AP-CVD (6 nm).…”

Section: Cht Study Of Metal-insulator-metal Diodessupporting

confidence: 79%

Nanoscale Film Thickness Gradients Printed in Open Air by Spatially Varying Chemical Vapor Deposition

et al. 2021

View full text Add to dashboard Cite

Nanoscale films are integral to all modern electronics. To optimize device performance, researchers vary the film thickness by making batches of devices, which is time-consuming and produces experimental artifacts. Thin films with nanoscale thickness gradients that are rapidly deposited in open air for combinatorial and high-throughput (CHT) studies are presented. Atmospheric pressure spatial atomic layer deposition reactor heads are used to produce spatially varying chemical vapor deposition rates on the order of angstroms per second. ZnO and Al 2 O 3 films are printed with nm-scale thickness gradients in as little as 45 s and CHT analysis of a metal-insulator-metal diode and perovskite solar cell is performed. By testing 360 Pt/Al 2 O 3 /Al diodes with 18 different Al 2 O 3 thicknesses on one wafer, a thicker insulator layer (≈7.0 nm) is identified for optimal diode performance than reported previously. Al 2 O 3 thin film encapsulation is deposited by atmospheric pressure chemical vapor deposition (AP-CVD) on a perovskite solar cell stack for the first time and a convolutional neural network is developed to analyze the perovskite stability. The rapid nature of AP-CVD enables thicker films to be deposited at a higher temperature than is practical with conventional methods. The CHT analysis shows enhanced stability for 70 nm encapsulation films.

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“…In addition, the graphene allows the electrons to move freely in the plane without encountering scattering points on the contrary in metals, where electrons move through a 3D plane encountering scattering points, impurities, and thermal vibrations. However, 2D material requires ultrafine lithography to form the device and this makes the manufacturing process challenging [75][76][77][78][79][80][81][82].…”

Section: Thz Diode Technology: General Information On Geometric Diode...mentioning

confidence: 99%

Progress in THz Rectifier Technology: Research and Perspectives

2022

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Schottky diode (SD) has seen great improvements in the past few decades and, for many THz applications, it is the most useful device. However, the use and recycling of forms of energy such as solar energy and the infrared thermal radiation that the Earth continuously emits represent one of the most relevant and critical issues for this diode, which is unable to rectify signals above 5 THz. The goal is to develop highly efficient diodes capable of converting radiation from IR spectra to visible ones in direct current (DC). A set of performance criteria is investigated to select some of the most prominent materials required for developing innovative types of electrodes, but also a wide variety of insulator layers is required for the rectification process, which can affect the performance of the device. The current rectifying devices are here reviewed according to the defined performance criteria. The main aim of this review is to provide a wide overview of recent research progress, specific issues, performance, and future directions in THz rectifier technology based on quantum mechanical tunneling and asymmetric structure.

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Numerical Analysis of MIM-Based Log-Spiral Rectennas for Efficient Infrared Energy Harvesting

Cited by 9 publications

References 40 publications

Nanoscale Film Thickness Gradients Printed in Open Air by Spatially Varying Chemical Vapor Deposition

Nanoscale Film Thickness Gradients Printed in Open Air by Spatially Varying Chemical Vapor Deposition

Nanoscale Film Thickness Gradients Printed in Open Air by Spatially Varying Chemical Vapor Deposition

Progress in THz Rectifier Technology: Research and Perspectives

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