Numerical Analysis of Stable (FAPbI3)0.85(MAPbBr3)0.15-Based Perovskite Solar Cell with TiO2/ZnO Double Electron Layer

Abstract

Although perovskite solar cells have achieved excellent photoelectric conversion efficiencies, there are still some shortcomings, such as defects inside and at the interface as well as energy level dislocation, which may lead to non-radiative recombination and reduce stability. Therefore, in this study, a double electron transport layer (ETL) structure of FTO/TiO2/ZnO/(FAPbI3)0.85(MAPbBr3)0.15/Spiro-OMeTAD is investigated and compared with single ETL structures of FTO/TiO2/(FAPbI3)0.85(MAPbBr3)0.15/Spiro-OMeTAD and FTO/ZnO/(FAPbI3)0.85(MAPbBr3)0.15/Spiro-OMeTAD using the SCAPS-1D simulation software, with special attention paid to the defect density in the perovskite active layer, defect density at the interface between the ETL and the perovskite active layer, and temperature. Simulation results reveal that the proposed double ETL structure could effectively reduce the energy level dislocation and inhibit the non-radiative recombination. The increases in the defect density in the perovskite active layer, the defect density at the interface between the ETL and the perovskite active layer, and the temperature all facilitate carrier recombination. Compared with the single ETL structure, the double ETL structure has a higher tolerance for defect density and temperature. The simulation outcomes also confirm the possibility of preparing a stable perovskite solar cell.

Optimization and Efficiency Enhancement of Modified Polymer Solar Cells

“…In Equation (9), σ represents the capture cross-section, N t stands for defect density and V th denotes the thermal velocity associated with the carriers. The defect density (N t ) plays a crucial role in determining the recombination rate, known as the Shockley–Read–Hall recombination (R), which can be expressed as [ 38 , 39 , 40 ]: where ni denotes intrinsic carrier concentration, n and np represent mobile-carrier concentration and Pt refers to the trap-defect concentration.…”

“…In Equation ( 9), σ represents the capture cross-section, Nt stands for defect density and Vth denotes the thermal velocity associated with the carriers. The defect density (Nt) plays a crucial role in determining the recombination rate, known as the Shockley-Read-Hall recombination (R), which can be expressed as [38][39][40]:…”

Numerical Analysis on the Effect of the Conduction Band Offset in Dion–Jacobson Perovskite Solar Cells

“…SCAPS is widely used for numerical simulations of solar cells. Based on the fundamental equations of semiconductor device physics, including the Poisson equation, hole continuity equations, and electron continuity equations (Equations ( 1)-( 3)) [31,32], SCAPS can calculate the current density-voltage characteristics (J-V), spectral response, capacitancefrequency characteristics (C-F), capacitance-voltage characteristics (C-V) band structures, carrier concentration, and spectral response under specific boundary conditions and has been extensively employed in numerical analyses of perovskite solar cells [3,4,33]. Specific operating parameters such as bias voltage, frequency, and temperature are set in SCAPS before running the simulation model.…”

Numerical simulation of solar cell performance with copper-based layered perovskite using SCAPS-1D software

“…Similarly, Spiro-OMeTAD exhibits conduction and valence bands higher than those of (CH 3 NH 3 ) 2 CuCl 4 , promoting hole mobility but impeding electron transmission. As a result, a stepped conduction band structure is formed in the device, leading to a reduction in non-radiative recombination stemming from energy level misalignment [41]. It is essential to emphasize that the performance of the device is primarily influenced by various electrical, optical, material, and device parameters integrated into the simulation.…”