Numerical Analysis of the LDMOS With Side Triangular Field Plate

Abstract

A Lateral Double-diffused Metal Oxide Semiconductor (LDMOS) with side triangular field plate (STFP) is proposed for improving the breakdown voltage (BV) and reducing the specific on-resistance (R on,sp ). The main feature of the novel LDMOS is the STFPs at both ends of the drift region, and they are fabricated into the dielectric pillars. With the introduction of the STFPs, the electric field peaks at the P-well/N-drift and N+/N-drift junctions are reduced effectively. The STFPs together with the dielectric pillars modulate the surface and vertical electric field distributions, which enhances the BV. Meanwhile, the doping concentration of the silicon pillars in the drift region is optimized and thus reduces the R on,sp . The simulation results indicate that the BV of 379 V and the R on,sp of 37.3 m •cm 2 are achieved by the STFP-LDMOS. The figure of merits (FOM) of the STFP-LDMOS is 2.7 times compared with the conventional LDMOS without STFPs. The STFP-LDMOS demonstrates a great trade-off between the R on,sp and BV.

Automatic optimal design of field plate for silicon on insulator lateral double‐diffused metal oxide semiconductor using simulated annealing algorithm

“…Silicon on insulator (SOI) lateral double-diffused metal oxide semiconductor (LDMOS) typically operates in harsh environments with high voltage. Conventionally, to increase the breakdown voltage (BV) of SOI LDMOS, various techniques have been proposed [1][2][3][4][5][6]. Among these techniques, the field plate (FP) technology has gained widespread popularity due to its simplified fabrication process and superior capability in improving performance.…”

Deep neural network-based approach for breakdown voltage and specific on-resistance prediction of SOI LDMOS with field plate

“…4,5) Hence, to modify the electric field distribution, field plate technology has been developed. [6][7][8][9][10] Nowadays, for practical devices, this technology has become an essential part. At the same time, the analysis of BV and R on,sp of the device becomes more complicated due to the introduction of the field plate.…”

“…At the same time, the analysis of BV and R on,sp of the device becomes more complicated due to the introduction of the field plate. Currently, methods for predicting the effect of field plate on BV and R on,sp of devices rely on tool simulation such as Sentaurus, 6) Medici, 7) and so on, which still facing problems, i.e. non-convergence, time-consuming, and inability to simulate BV and specific on-resistance simultaneously.…”

Novel Si/SiC heterojunction lateral double-diffused metal–oxide semiconductor field-effect transistor with p-type buried layer breaking silicon limit*

“…[1][2][3][4][5] The conventional silicon (Si) LDMOS has encountered obstacles in the application of the high power due to the mutually restrictive relationship between the specific onresistance (R on,sp ) and the breakdown voltage (BV). [6,7] Silicon carbide (SiC) material has the characteristics of the wide band gap and high BV, so it is used in the field of the highvoltage power devices. [8] However, the development of SiC power devices is limited by gate oxide because SiC has a higher density of dangling Si and C bonds at the SiC/SiO 2 interface.…”