Numerical analysis of the short-circuit current density in GaInAsSb thermophotovoltaic diodes

Effect of material parameters on the open-circuit voltage in a GaInAsSb thermophotovoltaic cell

“…2a, the base region bulk recombination determined V OC (e.g. ( V OC ) Aug , (V OC ) Rad , (V OC ) SRH ) and the surface recombination determined V OC decreases and increases with H B increasing, respectively, and the effects of the bulk SRH Table 1 Summary of the V OC determined by the individual recombination mechanisms (the physical meanings of the related recombination parameters have been presented in our previous paper [13]). …”

“…1) lets the above bandgap photons double pass the active P-N junction, which can increase the photon absorption efficiently. The effect of BSR on J SC has been discussed in our previous paper [13], the BSR can increase J SC . Increasing the photon absorption by BSR can also increase the photo recycling factor (u), resulting in decrease in radiative recombination rate, Dashiell et al have been calculated u = 4 for R BSR = 0% (the reflectance of the BSR) and u = 40 for R BSR = 100% [6].…”

“…The input parameters in PC-1D for Ga 0.8 In 0.2 As 0.18 Sb 0.82 have been given in our previous paper [13], and that for GaSb could be taken from Refs. [14,15].…”

“…This cell operated in a TPV system with the fixed radiator temperature (T rad = 950°C) and spectral control system (presented in Ref. [13]), e.g. the fixed incident radiation spectral photon flux (number of incident photons/cm 2 /s per unit bandwidth).…”

Suppression of the surface “dead region” for fabrication of GaInAsSb thermophotovoltaic cells

“…Normally, epitaxial growth or a Zn diffusion process is used to form p-n junctions in GaInAsSb cells. An AlGaAsSb window layer should be deposited to reduce the high level of surface recombination if the epitaxial process is used [2,3,10]. However, cells with this type of structure are not suitable for near-field TPV systems owing to the surface window layer.…”