2018
DOI: 10.3390/en11081963
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Numerical Analysis to Determine Reliable One-Diode Model Parameters for Perovskite Solar Cells

Abstract: Abstract:With the aim to determine the photo-generated current, diode saturation current, ideality factor, shunt, and series resistances related to the one-diode model for p-i-n planar perovskite solar cells, reference cells with active area of approximately 1 cm 2 and efficiencies ranging between 4.6 and 12.2% were fabricated and characterized at standard test conditions. To estimated feasible parameters, the mean square error between the I-V curve data of these cells and the circuital model results were mini… Show more

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Cited by 16 publications
(14 citation statements)
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“…On the other hand, the impedance/frequency-response data were fitted considering the equivalent circuit, as reported elsewhere 48 and shown in Supplementary Figure 13, to estimate the parameters. For impedance fitting, a global optimization process involving a genetic algorithm (GA) and the simplex method was used, as reported in a previous work 33 , to minimize the square error between the measured impedance (Z) and the impedance calculated using the equivalent circuit (Z model ) at the frequencies considered (f), considering all samples recorded (NS) (Eq.…”
Section: Methodsmentioning
confidence: 99%
See 1 more Smart Citation
“…On the other hand, the impedance/frequency-response data were fitted considering the equivalent circuit, as reported elsewhere 48 and shown in Supplementary Figure 13, to estimate the parameters. For impedance fitting, a global optimization process involving a genetic algorithm (GA) and the simplex method was used, as reported in a previous work 33 , to minimize the square error between the measured impedance (Z) and the impedance calculated using the equivalent circuit (Z model ) at the frequencies considered (f), considering all samples recorded (NS) (Eq.…”
Section: Methodsmentioning
confidence: 99%
“…For PSCs, although there are relatively few reports related to this parameter, Tress and coworkers have reported a full interpretation of n ID for nonencapsulated cells, establishing the relationship between the dominating recombination process, the light intensity and V oc 26 . In addition, n ID has been estimated through impedance/frequency-response (IFR) analysis [30][31][32] , from the I-V curve at standard test conditions using an one-diode model 33 , and from the dark I-V curve through numerical simulation considering the continuity and Poisson's equations 34 . Moreover, agreement has been shown between the n ID value estimated from the recombination resistance extracted through IFR analysis and the value calculated from V oc at different light intensities 31,32 .…”
mentioning
confidence: 99%
“…Additionally, the sensitivity of S3a decreases almost proportionally to the difference in the S2a ideality factor. This means that approaching an ideal junction can lead to an improvement in sensitivity [54]. The best performance of the S2a sensor (sensitivity, responsivity, response and recovery speed) compared to S1a and S3a, was demonstrated by several parameters: crystallite size, porosity, layer thickness, band-gap energy values and flat-band potential.…”
Section: Optical Electrochemical and Electrical Propertiesmentioning
confidence: 99%
“…They fabricated and characterized the cells with approximately 1 cm 2 active area at ideal test conditions. The efficiencies extended from 4.6 to 12.2% [60].…”
Section: Ekb Publishingmentioning
confidence: 98%