Numerical and analytical modelling of electron transport in heterojunction bipolar transistors operating in the coherent regime

Abstract

An ensemble Monte Carlo particle simulation has been used to investigate electron transport in the base region of a heterojunction bipolar transistor operating in the coherent regime. An analytical model of the coherent transistor which includes elastic and quasi-elastic electron scattering has been developed and compared with results of numerical simulation. It has been found that the developed analytical model is in good agreement with the results of numerical simulation. We propose a new expression for the base transport factor of the heterojunction bipolar transistor operating in the coherent regime, which takes into account the influence of thermal dispersion of injected electrons and electron scattering in the base.